Investigation of the inhomogeneous barrier height of an Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height
Yükleniyor...
Dosyalar
Tarih
2012
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission (TE) theory. Zero-bias barrier height (Phi(B0)) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Phi(B0) increases with temperature increasing, whereas n decreases. The obtained temperature dependence of Phi(B0) and linearity in Phi(B0) versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.
Açıklama
YILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028
WOS: 000314221400083
WOS: 000314221400083
Anahtar Kelimeler
Bi4Ti3O12, I-V characterization, temperature dependence, Gaussian distribution
Kaynak
Chinese Physics B
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
21
Sayı
12
