A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer

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dc.contributor.authorKaya, Ahmet
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorTecimer, Hüseyin
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T22:38:37Z
dc.date.available2020-04-30T22:38:37Z
dc.date.issued2014
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYen_US
dc.description/0000-0002-8211-8736en_US
dc.descriptionWOS: 000345645000005en_US
dc.description.abstractIn this study, Al/p-Si structures with undoped and Co-doped PVA interfacial layer called S-1 and S-2 were fabricated and their both electrical and dielectric properties were compared by using 300 kHz capacitance voltage (C-V) and conductance voltage (G/omega-V) measurements at room temperature. Experimental results show that both C and G or dielectric constant (epsilon'), dielectric loss (epsilon '') values were found as strongly function of applied bias voltage especially at inverse and accumulation bias regions. It was found that the value of R-5 considerably decreases with doping Co metal contrary to conductivity especially in the forward bias region. Such behavior can be attributed to the lack of free charges in pure PVA. The imaginary parr of dielectric modulus (M '') gives Two peaks for S-1 corresponding To enough reverse and forward biases and passes from a minimum at about zero bias. Also, it is clear That the minimum of The M '' for S-2 coincides with The maximum of The for S-1 at zero bias. As a result, Co-doped PVA considerable improved The performance of structure. In addition, loss Tangent. (tan delta), ac conductivity (sigma(ac)) and real part. of The electric modulus (M') were obtained and compared each other. (C) 2014 Elsevier Ltd. All rights reserved,en_US
dc.identifier.doi10.1016/j.mssp.2014.03.015en_US
dc.identifier.endpage30en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage26en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.03.015
dc.identifier.urihttps://hdl.handle.net/20.500.12684/2320
dc.identifier.volume28en_US
dc.identifier.wosWOS:000345645000005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectComparing Al/PVA/p-Si and AhCo-PVA/p-Si structuresen_US
dc.subjectElectric and dielectric propertiesen_US
dc.subjectVoltage dependenten_US
dc.subjectElectric modulusen_US
dc.subjectAc conductivityen_US
dc.titleA comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layeren_US
dc.typeArticleen_US

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