Poli (Linolenik asit)-g-Poli (Kaprolakton)-g-Poli (t-bütil akrilat) (PLilPCLPtBA) Graft Kopolimer Arayüzeyin Au/n-Si Diyot Parametrelerine Etkisi
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Date
2018
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Düzce Üniversitesi
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info:eu-repo/semantics/openAccess
Abstract
Poli (linolenik asit)-g-poli (kaprolakton)-g-poli (t-bütil akrilat) (PLilPCLPtBA) graft kopolimer Au/n-Si Schottky diyotlarda arayüzey tabaka olarak kullanılmıştır. Bu arayüzey tabakanın diyotlarda kullanılabilirliğini ve elektro-optik etkilerini incelemek için Au/n-Si (MS) ve Au/PLilPCLPtBA/n-Si (MPS) diyotlar üretilmiştir. PLilPCLPtBA polimer tabaka n-Si tek kristal üzerine elektrospinning yöntemiyle kaplanmıştır. Bu tabakanın yüzey morfolojisi ve nano fiber yapısı elektron mikroskobu yardımıyla incelenmiştir. MS ve MPS diyotların akım-voltaj (I-V) ölçümleri karanlık, halojen lamba ve UV (365 nm) aydınlatma şartlarında ve oda sıcaklığında gerçekleştirilmiştir. Bu diyotların; ters beslem doyum akımı (Io), sıfır beslem engel yüksekliği (?Bo), idealite faktörü (n), seri direnç (Rs), şönt direnç (Rsh) ve arayüzey durum yoğunluğu (Nss) gibi temel elektriksel parametreleri I-V ölçümlerinden hesaplanmıştır. Elde edilen değerler her bir aydınlatma durumu için kıyaslamalı olarak verilmiştir.
Poly (linolenic acid)-g-poly (caprolactone)-g-poly (t-butyl acrylate) (PLilPCLPtBA) graft copolymers were used as interfacial layer in Au/n-Si Schottky diodes. Au/n-Si (MS) and Au/PLilPCLPtBA/n-Si (MPS) diodes were fabricated to explore the usability of this graft copolymer as interfacial layer and investigate its electro-optical effects on the diodes. PLilPCLPtBA polymer layer was coated on n-Si single crystal by electrospinning method. Surface morphology and nano fiber characteristics of this layer were investigated using an electron microscope. The current-voltage (I-V) measurements of the MS and MPS diodes were performed under dark, halogen lamp and UV (365 nm) illumination conditions at room temperature. Main electrical parameters such as reverse bias saturation current (Io), zero bias barrier height (?Bo), ideality factor (n), series resistance (Rs), shunt resistance (Rsh) and interface state density (Nss) of the diodes were extracted from I-V measurements. The obtained values are given as a comparison for each illumination conditions.
Poly (linolenic acid)-g-poly (caprolactone)-g-poly (t-butyl acrylate) (PLilPCLPtBA) graft copolymers were used as interfacial layer in Au/n-Si Schottky diodes. Au/n-Si (MS) and Au/PLilPCLPtBA/n-Si (MPS) diodes were fabricated to explore the usability of this graft copolymer as interfacial layer and investigate its electro-optical effects on the diodes. PLilPCLPtBA polymer layer was coated on n-Si single crystal by electrospinning method. Surface morphology and nano fiber characteristics of this layer were investigated using an electron microscope. The current-voltage (I-V) measurements of the MS and MPS diodes were performed under dark, halogen lamp and UV (365 nm) illumination conditions at room temperature. Main electrical parameters such as reverse bias saturation current (Io), zero bias barrier height (?Bo), ideality factor (n), series resistance (Rs), shunt resistance (Rsh) and interface state density (Nss) of the diodes were extracted from I-V measurements. The obtained values are given as a comparison for each illumination conditions.
Description
YÖK Tez No: 536740
Keywords
Fizik ve Fizik Mühendisliği, Physics and Physics Engineering, Schottky kontakları, Schottky contacts, İletken polimerler, Conducting polymers
