Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level

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dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorTunç, Tuncay
dc.contributor.authorTecimer, Hüseyin
dc.contributor.authorYücedağ, İbrahim
dc.date.accessioned2020-05-01T09:12:12Z
dc.date.available2020-05-01T09:12:12Z
dc.date.issued2014
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYen_US
dc.description/0000-0002-8211-8736en_US
dc.descriptionWOS: 000345645000009en_US
dc.description.abstractElectrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures were investigated in dark and under 250 W illumination level using forward and reverse bias current voltage (I-V) measurements at room temperature. Reverse saturation current (I-0), ideality factor (n), and zero-bias-barrier height (phi(B0)) values were found as 1.18 x 10(-8) A, 2.492 and 0.705 eV in dark (low region); 9.10 x 10(-7) A, 7.515 and 0.597 eV in dark (high region); and 1.05 x 10(-6) A, 6.053 and 0.593 eV under 250W illumination level. The forward bias semi-logarithmic I-V plot in dark was described using a two diode model, indicating two current-transport mechanisms acting in the diode. The first mechanism can be attributed to recombination of carriers between Au/(Ni, Zn) and doped PVA, and second one can be attributed to recombination in the depletion region. In addition, the energy density distribution profile of surface stares (N-ss) was extracted from the forward-bias I-V data by raking into account the voltage dependent of the effective barrier height(phi(e)), ideality factor n(V), and series resistance (R-s). (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.05.007en_US
dc.identifier.endpage53en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage48en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.05.007
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5905
dc.identifier.volume28en_US
dc.identifier.wosWOS:000345645000009en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/(Ni, Zn)-doped PVA/n-Si structuresen_US
dc.subjectIllumination effect on electricalen_US
dc.subjectcharacteristicsen_US
dc.subjectEnergy dependent profile of N-ssen_US
dc.subjectSeries and shunt resistancesen_US
dc.titleElectrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination levelen_US
dc.typeArticleen_US

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