Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorKaraman, Mehmet
dc.contributor.authorAydemir, Umut
dc.date.accessioned2020-05-01T12:10:06Z
dc.date.available2020-05-01T12:10:06Z
dc.date.issued2011
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionGokcen, Muharrem/0000-0001-9063-3028en_US
dc.descriptionWOS: 000295468900025en_US
dc.description.abstractThe effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(Bo)) were calculated from ln(I) vs. V plots and Cheung methods. The energy density distribution profile of the interface states was obtained from the forward bias I-V data by taking bias dependence of ideality factor, effective barrier height (Phi(e)) and R-s into account for MS and MIS SBDs. It was found that N-ss values increase from at about mid-gap energy of Si to bottom of conductance band edge of both SBDs and the MIS SBD's N-ss values are 5-10 times lower than those of MS SBD's. An apparent exponential increase from the mid-gap towards the bottom of conductance band is observed for both SBDs' (MS and MIS) interface states obtained without taking R-s into account. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipDuzce UniversityDuzce University [2010.05.02.056]en_US
dc.description.sponsorshipThis work is supported by Duzce University Scientific Research Project (Project no. 2010.05.02.056).en_US
dc.identifier.doi10.1016/j.physb.2011.08.006en_US
dc.identifier.endpage4123en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue21en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4119en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2011.08.006
dc.identifier.urihttps://hdl.handle.net/20.500.12684/6002
dc.identifier.volume406en_US
dc.identifier.wosWOS:000295468900025en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/n-Sien_US
dc.subjectInsulator layer effectsen_US
dc.subjectSeries resistanceen_US
dc.subjectI-V characteristicen_US
dc.subjectInterface statesen_US
dc.titleForward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layeren_US
dc.typeArticleen_US

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