Designing CuInSe2 quantum dot-based high-performance Schottky photodetector: a numerical study

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dc.authoridYILDIZ, MURAT/0000-0003-2746-4190en_US
dc.authorscopusid55366153300en_US
dc.authorscopusid55986829800en_US
dc.authorwosidYILDIZ, MURAT/HLP-9528-2023en_US
dc.contributor.authorCadirci, Musa
dc.contributor.authorYildiz, Murat
dc.date.accessioned2024-08-23T16:04:22Z
dc.date.available2024-08-23T16:04:22Z
dc.date.issued2023en_US
dc.departmentDüzce Üniversitesien_US
dc.description.abstractSensing in the near-infrared and visible wavelengths is critically essential for a broad range of potential applications. Colloidal quantum dot(CQD) based photodetectors provide key advantages, such as spectral tuneability, straight integration with electronic parts, high sensitivity and low cost. Here, a Schottky photodiode architecture based on CuInSe2 (CISe) CQDs structure was designed and its photoresponse characteristics were simulated at various absorber layer thicknesses, at different back contact materials, varying light intensities, several defect densities, and different temperatures. A maximum responsivity of about 0.37 A W-1 was recorded from the proposed device. This work demonstrates that CISe CQDs are potential candidate materials for high-performance Schottky photodetectors operating in the near-infrared and visible electromagnetic spectrum.en_US
dc.identifier.doi10.1088/1402-4896/aceebe
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-85169901922en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/aceebe
dc.identifier.urihttps://hdl.handle.net/20.500.12684/14183
dc.identifier.volume98en_US
dc.identifier.wosWOS:001057439200001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCuInSe2 quantum dotsen_US
dc.subjectphotodetectoren_US
dc.subjectSCAPS 1Den_US
dc.subjectOpen-Circuit Voltageen_US
dc.subjectInfrared Photodetectorsen_US
dc.subjectMechanismsen_US
dc.subjectProspectsen_US
dc.titleDesigning CuInSe2 quantum dot-based high-performance Schottky photodetector: a numerical studyen_US
dc.typeArticleen_US

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