On the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorAltuntaş, Havva
dc.date.accessioned2020-04-30T23:20:10Z
dc.date.available2020-04-30T23:20:10Z
dc.date.issued2009
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionGokcen, Muharrem/0000-0001-9063-3028;en_US
dc.descriptionWOS: 000271908100071en_US
dc.description.abstractThe temperature (T) dependence of electrical and dielectric characteristics such as series resistance (R-s), dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), and real and imaginary pan of electrical modulus (M' and M '') of the Au/SiO2/n-GaAs (MOS) structures have been investigated in the temperature range of 80-350 K at various frequencies by using experimental capacitance (C) and conductance (G/w) measurements. Experimental results show that both C and G/w characteristics were quite sensitive to frequency and temperature at especially high temperatures and low frequencies due to a continuous density distribution of interface states and their relaxation time, and thermal restructuring and reordering of the inter-face. Series resistance values of this device obtained from Nicollian method decrease with increasing frequency and temperature. The epsilon', epsilon '', tan delta, and M' and M '' were found a strong function of frequency and temperature. While the values of epsilon', epsilon '', and tan delta decrease, M' and M '' increase with increasing frequency. Also, while epsilon' and epsilon '' increase, M' and M '' decrease with increasing temperature. The tan delta and M' values are almost independent temperature especially at high frequencies (f >= 500 kHz). (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTurkish Prime Ministry state Planning Agency [2001K120590]; European Transnational Access Program [RITA-CT-2003-506095-WISSMC]en_US
dc.description.sponsorshipThis study is supported by the Turkish Prime Ministry state Planning Agency under project no: 2001K120590. We acknowledge the support of European Transnational Access Program no. RITA-CT-2003-506095-WISSMC. Last but not least we thank Dr. Hadas Shtrikman from the Braun Center for Submicron Research for making the samples feasible for this research.en_US
dc.identifier.doi10.1016/j.physb.2009.08.023en_US
dc.identifier.endpage4224en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue21en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4221en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2009.08.023
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3948
dc.identifier.volume404en_US
dc.identifier.wosWOS:000271908100071en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/SiO2/n-GaAs structuresen_US
dc.subjectSeries resistanceen_US
dc.subjectDielectric propertiesen_US
dc.subjectTemperature effecten_US
dc.subjectFrequency effecten_US
dc.subjectElectric modulusen_US
dc.titleOn the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequenciesen_US
dc.typeArticleen_US

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