Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorAltuntaş, Havva
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorÖzçelik, Süleyman
dc.date.accessioned2020-05-01T12:10:07Z
dc.date.available2020-05-01T12:10:07Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionGokcen, Muharrem/0000-0001-9063-3028; Ozcelik, Suleyman/0000-0002-3761-3711en_US
dc.descriptionWOS: 000305111900010en_US
dc.description.abstractThe frequency (f) and bias voltage (V) dependence of electrical and dielectric properties of Au/SiO2/n-GaAs structures have been investigated in the frequency range of 10 kHz-3 MHz at room temperature by considering the presence of series resistance (R-s). The values of R-s, dielectric constant (epsilon'), dielectric loss (epsilon '') and dielectric loss tangent (tan delta) of these structures were obtained from capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements and these parameters were found to be strong functions of frequency and bias voltage. In the forward bias region, C-V plots show a negative capacitance (NC) behavior, hence epsilon'-V plots or each frequency value take negative values as well. Such negative values of C correspond to the maximum of the conductance (G/omega). The crosssection of the C-V plots appears as an abnormality when compared to the conventional behavior of ideal Schottky barrier diode (SBD), metal-insulator-semiconductor (MIS) and metal-oxide-semiconductor (MOS) structures. Such behavior of C and epsilon' has been explained with the minority-carrier injection and relaxation theory. Experimental results show that the dielectric properties of these structures are quite sensitive to frequency and applied bias voltage especially at low frequencies because of continuous density distribution of interface states and their relaxation time. (c) 2011 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipTurkish Prime Ministry State Planning Agency [2001K120590]; European Transnational Access Program [RITA-CT-2003-506095_WISSMC]en_US
dc.description.sponsorshipThis study is supported by the Turkish Prime Ministry State Planning Agency under project no.: 2001K120590. We acknowledge the support of European Transnational Access Program # RITA-CT-2003-506095_WISSMC. Last but not the least we thank Dr. Hadas Shtrikman from the Braun Center for Submicron Research for making the samples feasible for this research.en_US
dc.identifier.doi10.1016/j.mssp.2011.08.001en_US
dc.identifier.endpage46en_US
dc.identifier.issn1369-8001
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage41en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2011.08.001
dc.identifier.urihttps://hdl.handle.net/20.500.12684/6012
dc.identifier.volume15en_US
dc.identifier.wosWOS:000305111900010en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/SiO2/n-GaAs structuresen_US
dc.subjectNegative capacitanceen_US
dc.subjectDielectric propertiesen_US
dc.subjectFrequency dependenceen_US
dc.subjectVoltage dependenceen_US
dc.titleFrequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structuresen_US
dc.typeArticleen_US

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