A comparison study regarding Al/p-Si and Al/(carbon nanofiber-PVP)/p-Si diodes: current/impedance-voltage (I/Z-V) characteristics

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dc.authoridSEVGILI, OMER/0000-0003-1740-1444
dc.authoridAzizian-Kalandaragh, Yashar/0000-0001-6181-3767
dc.contributor.authorSevgili, Omer
dc.contributor.authorYildirim, Mert
dc.contributor.authorAzizian-Kalandaragh, Yashar
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2021-12-01T18:50:34Z
dc.date.available2021-12-01T18:50:34Z
dc.date.issued2020
dc.department[Belirlenecek]en_US
dc.description.abstractAl/p-Si and Al/(carbon nanofiber-PVP)/p-Si diodes were produced using a p-type silicon wafer with 10 omega cm resistivity to determine the polymer interlayer effects on device characteristics. To assess whether carbon nanofiber-PVP interlayer is beneficial for electrical performance, the current-voltage (I-V) and the impedance-voltage (Z-V) measurements were performed in wide range of voltage. Thus, electrical parameters such as series resistance, barrier height, and ideality factor were derived from the forward bias Ln (I-F)-V(F)and Cheung's functions, so that they are compared and voltage dependence of them is explored. Later, the values of intercept voltage, width of depletion layer, doping acceptor atom concentration, and barrier height were also extracted from C-2-Vdata at 1 MHz and then results were compared with each other. The surface states and their energy profile were also extracted from theI(F)-V(F)characteristics by considering barrier height (BH) and n is voltage dependent as well. Experimental results indicate that the carbon nanofiber-PVP interlayer decreases surface states (N-ss), series resistance (R-s) and leakage current, whereas it increases rectifying ratio and shunt resistance. Hence, such polymeric interlayer material forms an interesting alternative to conventional oxide layer due to some advantages of polymers such as desirably low values of cost, weight, and energy consumption.en_US
dc.description.sponsorshipGazi University Scientific Research Center [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipAll authors would like to thank Gazi University Scientific Research Center for the supports and contributions (Project no: GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1007/s00339-020-03817-7
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85088306230en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-020-03817-7
dc.identifier.urihttps://hdl.handle.net/20.500.12684/10895
dc.identifier.volume126en_US
dc.identifier.wosWOS:000551100300001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Heidelbergen_US
dc.relation.ispartofApplied Physics A-Materials Science & Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAlen_US
dc.subjectp-Si and Alen_US
dc.subject(polymer)en_US
dc.subjectp-Si diodesen_US
dc.subjectCurrenten_US
dc.subjectimpedance-voltage (Ien_US
dc.subjectZ-V) characteristicsen_US
dc.subjectPolyvinylpyrrolidone (PVP) interlayeren_US
dc.subjectSurface states (N-ss)en_US
dc.subjectSeries resistance (R-s) effects on the performanceen_US
dc.subjectCurrent-Transport Mechanismsen_US
dc.subjectSchottky Diodesen_US
dc.subjectElectrical-Propertiesen_US
dc.subjectInterface Layeren_US
dc.subjectFabricationen_US
dc.subjectPloten_US
dc.titleA comparison study regarding Al/p-Si and Al/(carbon nanofiber-PVP)/p-Si diodes: current/impedance-voltage (I/Z-V) characteristicsen_US
dc.typeArticleen_US

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