Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer

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dc.contributor.authorDurmuş, Perihan
dc.contributor.authorYıldırım, Mert
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T22:41:42Z
dc.date.available2020-04-30T22:41:42Z
dc.date.issued2013
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000324099300014en_US
dc.description.abstractIn this study, the effects of high permittivity interfacial Bi4Ti3O12 (BTO) layer deposition on the main electrical parameters; such as barrier height, series resistance, rectifying ratio, interface states and shunt resistance, of Al/p-Si structures are investigated using the currentevoltage (I-V) and admittance measurements (capacitance-voltage, C-V and conductance-voltage, G/omega-V) at 1 MHz and room temperature. I-V characteristics revealed that, due to BTO layer deposition, series resistance values that were calculated by both Ohm's law and Cheung's method decreased whereas shunt resistance values increased. Therefore, leakage current value decreased significantly by almost 35 times as a result of high permittivity interfacial BTO layer. Moreover, rectifying ratio was improved through BTO interfacial layer deposition. I-V data indicated that high permittivity interfacial BTO layer also led to an increase in barrier height. Same result was also obtained through C-V data. Obtained results showed that the performance of the device is considerably dependent on high permittivity BTO interfacial layer. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.cap.2013.06.015en_US
dc.identifier.endpage1636en_US
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue8en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1630en_US
dc.identifier.urihttps://doi.org/10.1016/j.cap.2013.06.015
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3233
dc.identifier.volume13en_US
dc.identifier.wosWOS:000324099300014en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMetal-ferroelectric-semiconductor (MFS) structuresen_US
dc.subjectBi4Ti3O12 (BTO)en_US
dc.subjectSeries and shunt resistanceen_US
dc.subjectInterface statesen_US
dc.titleControlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layeren_US
dc.typeArticleen_US

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