Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes

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dc.contributor.authorGümüş, Ahmet
dc.contributor.authorErsöz, Gülçin
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorBayrakdar, Sümeyye
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T22:41:09Z
dc.date.available2020-04-30T22:41:09Z
dc.date.issued2015
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000361624200020en_US
dc.description.abstractThe dielectric properties of Au/PPy/n-Si metal-polymer-semiconductor (MPS)-type Schottky barrier diodes (SBDs) were investigated by using capacitance-voltage (C-V) and conductancevoltage (G/omega-V) measurements at various temperatures and voltages at frequencies of 100 kHz and 500 kHz. Both the real and the imaginary parts of the complex dielectric constant and dielectric loss (epsilon', epsilon aEuro(3)) and of the electric modulus (M', MaEuro(3)), as well as the conductivity (sigma (ac) ), were found to depend strongly on the temperature and the voltage. Both the C and G/omega values increased with increasing applied voltage and had inversion, depletion, and accumulation regions as with a metal-insulator-semiconductor (MIS) type behavior. Both the dielectric constant (epsilon') and the dielectric loss (epsilon aEuro(3)) increased with increasing temperature and decreased with increasing frequency. The loss tangent (tan delta) vs. temperature curve had a peak at about 200 K for both frequencies. The M' and the MaEuro(3) values decreased with increasing temperature and became independent of the frequency at high temperatures. The series resistance (R (s) ) of the diode decreased with increasing temperature for the two frequencies while the sigma (ac) increased. Such behaviors of the dielectric properties with temperature were attributed to the restructuring and reordering of charges at interface states/traps due to the varying temperature, the interfacial polarization, and the interfacial polymer layer. ln(sigma (ac) ) vs. q/kT plots had two distinct linear regions with different slopes for the two frequencies. Such behaviors of these plots confirmed the existence of two different conduction mechanisms corresponding to low and high temperatures. The values of the activation energy (E (a) ) were obtained from the slopes of these plots, and its value at low temperatures was considerably lower than that at high temperatures.en_US
dc.identifier.doi10.3938/jkps.67.889en_US
dc.identifier.endpage895en_US
dc.identifier.issn0374-4884
dc.identifier.issn1976-8524
dc.identifier.issue5en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage889en_US
dc.identifier.urihttps://doi.org/10.3938/jkps.67.889
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3134
dc.identifier.volume67en_US
dc.identifier.wosWOS:000361624200020en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherKorean Physical Socen_US
dc.relation.ispartofJournal Of The Korean Physical Societyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/PPy/n-Si SBDsen_US
dc.subjectTemperature and frequency effecten_US
dc.subjectElectrical conductivityen_US
dc.subjectDielectric propertiesen_US
dc.subjectSeries resistanceen_US
dc.subjectPolypyrrole (PPy)en_US
dc.subjectActivation energyen_US
dc.titleComparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodesen_US
dc.typeArticleen_US

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