The effects of Bi4Ti3O12 interfacial ferroelectric layer on the dielectric properties of Au/n-Si structures

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorYıldırım, Mert
dc.date.accessioned2020-04-30T23:33:18Z
dc.date.available2020-04-30T23:33:18Z
dc.date.issued2015
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802; Gokcen, Muharrem/0000-0001-9063-3028en_US
dc.descriptionWOS: 000357932200004en_US
dc.description.abstractAu/n-Si metal-semiconductor (MS) and Au/Bi4Ti3O12/n-Si metal-ferroelectricsemiconductor (MFS) structures were fabricated and admittance measurements were held between 5 kHz and 1 MHz at room temperature so that dielectric properties of these structures could be investigated. The ferroelectric interfacial layer Bi4Ti3O12 decreased the polarization voltage by providing permanent dipoles at metal/semiconductor interface. Depending on different mechanisms, dispersion behavior was observed in dielectric constant, dielectric loss and loss tangent versus bias voltage plots of both MS and MFS structures. The real and imaginary parts of complex modulus of MFS structure take smaller values than those of MS structure, because permanent dipoles in ferroelectric layer cause a large spontaneous polarization mechanism. While the dispersion in AC conductivity versus frequency plots of MS structure was observed at high frequencies, for MFS structure it was observed at lower frequencies.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectDuzce University [2010.05.02.056, 2013.05.02.195]en_US
dc.description.sponsorshipThis work is supported by Duzce University Scientific Research Project (Project Nos. 2010.05.02.056 and 2013.05.02.195).en_US
dc.identifier.doi10.1142/S0217979215501209en_US
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue18en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1142/S0217979215501209
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4939
dc.identifier.volume29en_US
dc.identifier.wosWOS:000357932200004en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofInternational Journal Of Modern Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectFerroelectricen_US
dc.subjectBi4Ti3O12en_US
dc.subjectdielectric propertiesen_US
dc.subjectelectric modulusen_US
dc.subjectAC conductivityen_US
dc.titleThe effects of Bi4Ti3O12 interfacial ferroelectric layer on the dielectric properties of Au/n-Si structuresen_US
dc.typeArticleen_US

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