Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures

Basit Öğe Kaydı
dc.contributor.authorÇetinkaya, H.G.
dc.contributor.authorYıldırım, Mert
dc.contributor.authorDurmuş, Perihan
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-05-01T09:11:26Z
dc.date.available2020-05-01T09:11:26Z
dc.date.issued2017
dc.departmentDÜ, Mühendislik Fakültesi, Mekatronik Mühendisliği Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000412818600104en_US
dc.description.abstractIn this research, a total number of 58 diodes were fabricated in the form of Al/Bi4Ti3O12/p-Si structure and the voltage dependence of the real and imaginary parts of the complex dielectric constant (epsilon' and epsilon") and complex electric modulus (M' and M'') and ac electrical conductivity (sigma(ac)) of these diodes were investigated. It was also aimed to determine whether or not these parameters change from one sample to another and what kind of distribution exists for the identically fabricated samples. Mentioned parameters (e', e'', M', M'' and sac) were calculated using the capacitance and conductance data that were measured between -4 V and 4 V at 500 kHz at room temperature. Experimental results show that all of these parameters are strong functions of applied bias voltage especially in the depletion and accumulation regions. These changes are results of the restructuring and reordering of the surface states and their relaxation time under external electric field. Besides, it was found that there is diode-to-diode variation among the values of dielectric parameters which revealed double Gaussian distribution for the total 58 diodes. Thus, the results confirmed that investigating these parameters only for a single sample at a single bias voltage value cannot supply enough information on the dielectric properties and electric modulus. Therefore these parameters must be calculated in the wide range of bias voltage even for the identically prepared samples on the same semiconductor wafer. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipGazi University BAPGazi University [21/2017-01]en_US
dc.description.sponsorshipThis work is supported by Gazi University BAP [Grant number 21/2017-01].en_US
dc.identifier.doi10.1016/j.jallcom.2017.09.030en_US
dc.identifier.endpage901en_US
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage896en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2017.09.030
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5587
dc.identifier.volume728en_US
dc.identifier.wosWOS:000412818600104en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal Of Alloys And Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDielectric propertiesen_US
dc.subjectElectric modulusen_US
dc.subjectAl/Bi4Ti3O12/p-Si (MFS) structuresen_US
dc.subjectIdentically prepared diodesen_US
dc.titleDiode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structuresen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
5587.pdf
Boyut:
2.25 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu