The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature

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dc.contributor.authorUslu, Habibe
dc.contributor.authorYıldırım, Mert
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorDurmuş, Perihan
dc.date.accessioned2020-04-30T23:32:58Z
dc.date.available2020-04-30T23:32:58Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description/0000-0002-0094-7427; YILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000301016100003en_US
dc.description.abstractThe effect of Co-60 (gamma-ray) irradiation on the electrical and dielectric properties of Au/Polyvinyl Alcohol (Ni,Zn-doped)/n-Si Schottky barrier diodes (SBDs) has been investigated by using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at room temperature and 1 MHz. The real capacitance and conductance values were obtained by eliminating series resistance (R-s) effect in the measured capacitance (C-m) and conductance (G(m)) values through correction. The experimental values of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), ac electrical conductivity (sigma(ac)) and the real (M') and imaginary (M '') parts of the electrical modulus were found to be strong functions of radiation and applied bias voltage, especially in the depletion and accumulation regions. In addition, the density distribution of interface states (N-ss) profile was obtained using the high-low frequency capacitance (C-HF-C-LF) method for before and after irradiation. The N-ss-V plots give two distinct peaks for both cases, namely before radiation and after radiation, and those peaks correspond to two different localized interface states regions at M/S interface. The changes in the dielectric properties in the depletion and accumulation regions stem especially from the restructuring and reordering of the charges at interface states and surface polarization whereas those in the accumulation region are caused by series resistance effect. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.radphyschem.2011.12.029en_US
dc.identifier.endpage369en_US
dc.identifier.issn0969-806X
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage362en_US
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2011.12.029
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4862
dc.identifier.volume81en_US
dc.identifier.wosWOS:000301016100003en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics And Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic-based SBDsen_US
dc.subjectRadiation effectsen_US
dc.subjectDielectric propertiesen_US
dc.subjectAC electrical conductivityen_US
dc.subjectInterface statesen_US
dc.subjectSeries resistanceen_US
dc.titleThe effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperatureen_US
dc.typeArticleen_US

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