On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K

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dc.contributor.authorDurmuş, Haziret
dc.contributor.authorYıldırım, Mert
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T23:20:09Z
dc.date.available2020-04-30T23:20:09Z
dc.date.issued2019
dc.departmentDÜ, Mühendislik Fakültesi, Mekatronik Mühendisliği Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000468050800097en_US
dc.description.abstractAbstarctThis study presents electrical characteristics of n-GaAs based Schottky barrier diodes (SBDs) with Rhenium (Re) rectifier contacts. The electrical characteristics of the Re/n-GaAs SBDs were investigated utilizing the forward bias current-voltage (I-F-V-F) data collected in temperature range of 60-400K. The values of ideality factor (n) and zero-bias barrier height (phi(Bo)) were found as 9.10 and 0.11eV for 60K, and 1.384 and 0.624eV for 400K, respectively, on the basis of thermionic-emission theory. The conventional Richardson plot deviated from linearity at low temperatures and the Richardson constant value (A(*)) was obtained quite lower than the theoretical value for this semiconductor (8.16Acm(-2)K(-2)). nkT/q-kT/q plot shows that the field-emission may be dominant mechanism at low temperatures as a result of tunneling via surface states since the studied n-GaAs's doping concentration is on the order of 10(18) cm(-3), i.e. at high values so leads to tunneling. On the other hand, phi(Bo)-n, phi(Bo)-q/2kT and (n(-1)-1)-q/2kT plots exhibit linearity but this linearity is observed for two temperature regions (60-160K and 180-400K) due the presence of double Gaussian distribution (GD) of the barrier height. Therefore, the standard deviation value was obtained from the plot of phi(Bo)-q/2kT and it was used for modifying the conventional Richardson plot into the modified Richardson plot by which the values of mean barrier height and A(*) were obtained as 0.386eV and 15.55Acm(-2)K(-2) and 0.878eV and 8.35Acm(-2)K(-2) for the low and high temperature regions, respectively. As a result, I-F-V-F-T characteristics of the Re/n-GaAs SBDs were successfully elucidated by double-GD of barrier height.en_US
dc.identifier.doi10.1007/s10854-019-01233-zen_US
dc.identifier.endpage9037en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue9en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage9029en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01233-z
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3945
dc.identifier.volume30en_US
dc.identifier.wosWOS:000468050800097en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleOn the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400Ken_US
dc.typeArticleen_US

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