Effects of PCBM concentration on the electrical properties of the Au/P3HT:PCBM/n-Si (MPS) Schottky barrier diodes

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dc.contributor.authorÖzmen, Özge Tüzün
dc.date.accessioned2020-05-01T09:12:01Z
dc.date.available2020-05-01T09:12:01Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS: 000346954100019en_US
dc.description.abstractIn this study, the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diodes (SBDs) were investigated in terms of the effects of PCBM concentration on the electrical parameters. The forward and reverse bias current-voltage (I-V) characteristics of the Au/P3HT:PCBM/n-Si MPS SBDs fabricated by using the different P3HT:PCBM mass ratios were studied in the dark, at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (Phi(B0)), series resistance (R-s), shunt resistance (R-sh), and density of interface states (N-ss) were determined from I-V characteristics for the different P3HT:PCBM mass ratios (2:1, 6:1 and 10:1) used diodes. The values of n, R-s, Phi(B0), and N-SS were reduced, while the carrier mobility and current were increased, by increasing the PCBM concentration in the P3HT:PCBM organic blend layer. The ideal values of electrical parameters were obtained for 2:1 P3HT:PCBM mass ratio used diode. This shows that the electrical properties of MPS diodes strongly depend on the PCBM concentration of the P3HT:PCBM organic layer. Moreover, increasing the PCBM concentration in P3HT:PCBM organic blend layer improves the quality of the Au/P3HT:PCBM/n-Si (MPS) SBDs which enables the fabrication of high-quality electronic and optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.microrel.2014.07.144en_US
dc.identifier.endpage2774en_US
dc.identifier.issn0026-2714
dc.identifier.issue12en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2766en_US
dc.identifier.urihttps://doi.org/10.1016/j.microrel.2014.07.144
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5849
dc.identifier.volume54en_US
dc.identifier.wosWOS:000346954100019en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectP3HT:PCBM organic blend layeren_US
dc.subjectPCBM concentrationen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectI-V characteristicsen_US
dc.titleEffects of PCBM concentration on the electrical properties of the Au/P3HT:PCBM/n-Si (MPS) Schottky barrier diodesen_US
dc.typeArticleen_US

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