The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Basit Öğe Kaydı
dc.authoridYILDIRIM, Mert/0000-0002-8526-1802
dc.authorwosidYILDIRIM, Mert/B-8002-2015
dc.contributor.authorDurmuş, Haziret
dc.contributor.authorTataroğlu, Adem
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorYıldırım, Mert
dc.date.accessioned2023-07-26T11:54:49Z
dc.date.available2023-07-26T11:54:49Z
dc.date.issued2022
dc.departmentDÜ, Mühendislik Fakültesi, Mekatronik Mühendisliği Bölümüen_US
dc.description.abstractSchottky diodes still attract researchers as they are used in various device applications. This study provides I-V characteristics of Ti/n-GaAs (80-300 K). Higher barrier height (phi B0) values were obtained for higher tempera-tures, whereas the ideality factor exhibited the opposite behavior. This was associated with a barrier in -homogeneity at the Ti/GaAs interface, which has a Gaussian distribution (GD). The mean barrier height values calculated from the modified Richardson and phi B0 -q/2 kT plots were found to be 0.584 eV and 0.575 eV in the temperature range of 80-160 K. They were found as 1.041 eV and 1.033 eV between 180 K and 300 K, respectively. The modified Richardson constant value, on the other hand, was calculated as 22.06 A cm-2 K-2 (80-160 K) and 13.167 A cm-2 K-2 (180-300 K). These values are higher than the theoretical value for n-GaAs, which is 8.16 A cm-2 K-2. This difference may stem from intense inhomogeneity at the Ti/n-GaAs interface.en_US
dc.identifier.doi10.1016/j.cap.2022.09.015
dc.identifier.endpage89en_US
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.scopus2-s2.0-85139290174en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage85en_US
dc.identifier.urihttps://doi.org/10.1016/j.cap.2022.09.015
dc.identifier.urihttps://hdl.handle.net/20.500.12684/12930
dc.identifier.volume44en_US
dc.identifier.wosWOS:000869486600003en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYıldırım, Mert
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmz$2023V1Guncelleme$en_US
dc.subjectSchottky Diode; Temperature Effect; Ideality Factor; Barrier Inhomogeneities; Series Resistance; Gaussian Distribution; Semiconductor?S Forbidden Band Gap [4]en_US
dc.subjectI-V-T; Conduction Mechanismsen_US
dc.titleThe effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodesen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
12930.pdf
Boyut:
702.64 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu