The dielectric characteristics of spray deposited α-Si3N4:ZnO thin films: The nitride effect on frequency-dependent capacitance and conductance profiles

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dc.contributor.authorIbrahimoglu, Erhan
dc.contributor.authorDemir, Ahmet
dc.contributor.authorCaliskan, Fatih
dc.contributor.authorTatli, Zafer
dc.date.accessioned2025-10-11T20:48:26Z
dc.date.available2025-10-11T20:48:26Z
dc.date.issued2024
dc.departmentDüzce Üniversitesien_US
dc.description.abstractThe study focused on the effect of alpha-Si3N4 doping on the electrical/dielectric properties of ZnO thin films. Both alpha-Si3N4 doped and additive-free ZnO thin films were coated on p-Si substrates via a spray deposition method to achieve this. The electrical (current density (J)-voltage (V)) and dielectric properties (capacitance (C), conductance (G), dielectric loss (tan delta), reel/imaginary part of dielectric permittivity (epsilon ' and epsilon '') and electric modulus (M ' and M '')) were determined for all samples by using dielectric spectroscopy (DS) method. On the other hand, scanning electron microscopy (FESEM) and energy-dispersive spectroscopy (EDS) analysis were performed to evaluate microstructure, X-ray diffraction (XRD) was used to define chemical composition and atomic-force microscopy (AFM) analysis was carried out to characterise the topology of the coating layers. The thickness/surface roughness was obtained as similar to 82.5 nm/10.6 nm for undoped and- 99.5 nm/10.4 nm for nitride-doped samples, respectively. The maximum capacitance value (C) was obtained as 275 pF at -3.0V and 200 Hz, and the optimal conductance (G) value was also found as 45 mu S around 4.0V and 1 MHz in the nitride-doped sample. The average of alpha and tau values was calculated as 5.67 x 10(-5) s, 0.146 and 4.49 x 10(-5) s, 0.081 for nitride-doped and undoped ZnO, respectively. The increase in performance can be attributed to the homogeneous and almost equally-size distribution of the ZnO grain growth which is strongly controlled by alpha-Si3N4.en_US
dc.description.sponsorshipSakarya University of Applied Sciences Scientific Research Projects [070-2022]en_US
dc.description.sponsorshipThe study was funded by Sakarya University of Applied Sciences Scientific Research Projects (Project Number: 070-2022) .en_US
dc.identifier.doi10.1016/j.solidstatesciences.2024.107754
dc.identifier.issn1293-2558
dc.identifier.issn1873-3085
dc.identifier.scopus2-s2.0-85208289402en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.solidstatesciences.2024.107754
dc.identifier.urihttps://hdl.handle.net/20.500.12684/21927
dc.identifier.volume158en_US
dc.identifier.wosWOS:001356588400001en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofSolid State Sciencesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmzKA_WOS_20250911
dc.subjectalpha-Si3N4en_US
dc.subjectn-ZnOen_US
dc.subjectDielectric propertiesen_US
dc.subjectSpray depositionen_US
dc.subjectFrequencyen_US
dc.subjectVoltageen_US
dc.titleThe dielectric characteristics of spray deposited α-Si3N4:ZnO thin films: The nitride effect on frequency-dependent capacitance and conductance profilesen_US
dc.typeArticleen_US

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