Electrical and dielectric properties and intersection behavior of G/omega-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature

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dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKaya, Ahmet
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.date.accessioned2020-05-01T09:12:11Z
dc.date.available2020-05-01T09:12:11Z
dc.date.issued2014
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000347455600015en_US
dc.description.abstractBoth the electrical and the dielectric properties of the Al/Co-doped polyvinyl alcohol/p-Si metal-polymer-semiconductor (MPS) structure have been studied using temperature-dependent admittance-voltage (C/G-V) measurements at temperatures below room temperature at 300 kHz. The C-V plot indicates two peaks for each temperature corresponding to inversion and accumulation regions, respectively. The first peak was attributed to a particular distribution of interface traps (D (it) ), and the second was attributed to the series resistance (R (s) ) and interfacial polymer layer. G/omega-V plots show almost U-shape behavior for all temperatures and a crossing at almost 3 V. Such behavior of the G/omega-V plots may be attributed to the lack of free charge at low temperatures. After this intersection point, while the value of the capacitance (C) starts decreasing, the G/omega continues to increase. The temperature-dependent real and imaginary parts of the dielectric constant (epsilon', epsilon aEuro(3)) and of the electric modulus (M', MaEuro(3)), as well as the ac electrical conductivity (sigma (ac) ), of structure were obtained using C and G data before and after the intersection point (at 2 and 6 V), respectively. Experimental results show that the epsilon', epsilon aEuro(3), loss tangent (tan delta), sigma (ac) , M', and MaEuro(3) values were strong functions of the temperature and the applied bias voltage. In addition, G/omega-T and epsilon aEuro(3)-T plots show two different behaviors, one before and the other after the intersection point.en_US
dc.description.sponsorshipDuzce University BAP researchDuzce University [2013.07.02.204]en_US
dc.description.sponsorshipThis work is supported by Duzce University BAP research project number 2013.07.02.204.en_US
dc.identifier.doi10.3938/jkps.65.2082en_US
dc.identifier.endpage2089en_US
dc.identifier.issn0374-4884
dc.identifier.issn1976-8524
dc.identifier.issue12en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage2082en_US
dc.identifier.urihttps://doi.org/10.3938/jkps.65.2082
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5901
dc.identifier.volume65en_US
dc.identifier.wosWOS:000347455600015en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherKorean Physical Socen_US
dc.relation.ispartofJournal Of The Korean Physical Societyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMetal-polymer-semiconductor (MPS) structuresen_US
dc.subjectTemperature dependence of electric and dielectric propertiesen_US
dc.subjectIntersection behavior in G/omega-V-T plotsen_US
dc.titleElectrical and dielectric properties and intersection behavior of G/omega-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperatureen_US
dc.typeArticleen_US

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