On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

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dc.contributor.authorTekeli, Zeki
dc.contributor.authorGökçen, Muharrem
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorÖzçelik, Süleyman
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2020-04-30T23:20:09Z
dc.date.available2020-04-30T23:20:09Z
dc.date.issued2011
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionGokcen, Muharrem/0000-0001-9063-3028; Ozcelik, Suleyman/0000-0002-3761-3711en_US
dc.descriptionWOS: 000288578200012en_US
dc.description.abstractThe voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan (5) and real and imaginary part of electrical modulus (M' and M '') of the (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures have been investigated by using experimental admittance spectroscopy (capacitance-voltage (C-V) and conductance-voltage (G/w-V)) measurements at room temperature. Experimental results show that the values of the epsilon', epsilon '', tan delta and the real and imaginary parts of the electric modulus (M' and M '') obtained from the C and G/w measurements were found to be strong function of frequency and applied bias voltage especially in depletion region at low frequencies. These changes in dielectric parameters can be attributed to the interfacial GaN cap layer, interface polarization and a continuous density distribution of interface states and their relaxation time at metal/semiconductor interface. While the values of the epsilon' decrease with increasing frequencies, tan delta, M' and M '' increase with the increasing frequency. Also, the dielectric loss (epsilon '') have a local maximum at about frequency of 100 kHz. It can be concluded that the interface polarization can occur more easily at low frequencies with the number of interface states located at the metal/semiconductor interface. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.microrel.2010.09.018en_US
dc.identifier.endpage586en_US
dc.identifier.issn0026-2714
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage581en_US
dc.identifier.urihttps://doi.org/10.1016/j.microrel.2010.09.018
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3946
dc.identifier.volume51en_US
dc.identifier.wosWOS:000288578200012en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleOn the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructuresen_US
dc.typeArticleen_US

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