DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au-4H-n-SiC (MS) AND Au-Al2O3-4H-n-SiC (MIS) DEVICES

Basit Öğe Kaydı
dc.contributor.authorDemir, Gulcin Ersoz
dc.contributor.authorYucedag, Ibrahim
dc.date.accessioned2021-12-01T18:47:43Z
dc.date.available2021-12-01T18:47:43Z
dc.date.issued2021
dc.department[Belirlenecek]en_US
dc.description.abstractIn this study, Au-4H-n-SiC metal-semiconductor (MS) and Au-Al2O3-4H-n-SiC metal-insulator-semiconductor (MIS) devices were fabricated to examine the effects on the performance of electronic devices of interfacial insulating materials. In order to determine the dielectric properties, capacitance/conductance-voltage (C/G-V) measurements were realized in a wide range of voltages (-3.0 V)-(11.0 V). Current-voltage (I-V) measurements to obtain the electric properties were realized at +/- 2:5V. Moreover, both the energy distributions of surface states (N-ss) and series resistance (R-s) were obtained from the C/G-V data. Obtained results provided that series resistance originating from interfacial layer (Al2O3) was more effective on the I-V and C/G-V characteristics which must be taken into account in the calculation of main electrical parameters. The rectification ratio (RR) and shunt resistance (R-sh) of the MIS device were almost 10(3) times greater than those of the MS structure. Using Al2O3 between Au and 4H-n-SiC also led to an increase in the value of barrier height (BH) and a decrease in the value of ideality factor (n). These results confirmed that Al2O3 layer leads to an increase in the performance of MS device with respect to low values of N-ss, reverse saturation current (I-0) and n and high values of RR, R-sh and BH.en_US
dc.identifier.doi10.1142/S0218625X21500360
dc.identifier.issn0218-625X
dc.identifier.issn1793-6667
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85101978970en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1142/S0218625X21500360
dc.identifier.urihttps://hdl.handle.net/20.500.12684/10359
dc.identifier.volume28en_US
dc.identifier.wosWOS:000652587800002en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofSurface Review And Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAl2O3 interfacial insulator layeren_US
dc.subjectcomparison of MS and MIS devicesen_US
dc.subjectvoltage and frequency dependence of surface states and series resistance (R-s)en_US
dc.subjectDielectric-Propertiesen_US
dc.subjectAu/N-Sien_US
dc.subjectTransport Mechanismsen_US
dc.subjectSchottkyen_US
dc.subjectBehavioren_US
dc.subjectPassivationen_US
dc.subjectFabricationen_US
dc.subjectLayeren_US
dc.subjectOxideen_US
dc.titleDETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au-4H-n-SiC (MS) AND Au-Al2O3-4H-n-SiC (MIS) DEVICESen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu