Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures

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dc.contributor.authorDurmuş, Perihan
dc.contributor.authorYıldırım, Mert
dc.date.accessioned2020-04-30T23:18:30Z
dc.date.available2020-04-30T23:18:30Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000345215500025en_US
dc.description.abstractThree Al/Bi4Ti3O12/p-Si structures were fabricated with different interfacial layer thickness values (10, 25, and 53 nm) and admittance measurements of the structures were carried out between 1 kHz and 1 MHz in order to investigate the influence of interfacial layer thickness on dielectric properties of these structures. For the structure with thicker interfacial layer, higher dielectric constant (epsilon') and dielectric loss (epsilon '') values were obtained at low frequencies. At high frequencies, these parameters tend to be saturated and become almost constant. Loss tangent versus frequency plots exhibit a peak and magnitude of the peak weakens with increasing frequency and shifts toward high frequency region. The dispersion in epsilon' and epsilon '' with varying thickness at low frequencies was ascribed to interfacial polarization. In addition, obtained epsilon '' values indicated higher energy dissipation in the structure with thicker interfacial layer. Admittance data of the structures were also considered in terms of modulus formalism to interpret the relaxation processes in the structures. Moreover, dc electrical conductivity values were derived using frequency dependent ac electrical conductivity of the structures. (C) 2014 American Vacuum Society.en_US
dc.identifier.doi10.1116/1.4900533
dc.identifier.issn0734-2101
dc.identifier.issn1520-8559
dc.identifier.issue6en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1116/1.4900533
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3365
dc.identifier.volume32en_US
dc.identifier.wosWOS:000345215500025en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherA V S Amer Inst Physicsen_US
dc.relation.ispartofJournal Of Vacuum Science & Technology Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleInfluence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structuresen_US
dc.typeArticleen_US

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