Electrical and interfacial properties of Au/P3HT:PCBM/n-Si Schottky barrier diodes at room temperature

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dc.contributor.authorÖzmen, Özge Tüzün
dc.contributor.authorYağlıoğlu, E.
dc.date.accessioned2020-05-01T09:12:11Z
dc.date.available2020-05-01T09:12:11Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS: 000344823400062en_US
dc.description.abstractIn this study, a gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) was fabricated. To accomplish this, a spin-coating system and a thermal evaporation were used for preparation of a P3HT/PCBM layer system and for deposition of metal contacts, respectively. The forward- and reverse-bias current-voltage (I-V) characteristics of the MPS SBD at room temperature were studied to investigate its main electrical parameters such as ideality factor (n), barrier height (phi(B)), series resistance (R-s), shunt resistance (R-sh), and density of interface states (N-ss). The I-V characteristics have nonlinear behavior due to the effect of R-s, resulting in an n value (3.09) larger than unity. Additionally, it was found that n, phi(B), R-s, R-sh, and N-ss have strong correlation with the applied bias. All results suggest that the P3HT/PCBM interfacial organic layer affects the Au/P3HT:PCBM/n-Si MPS SBD, and that R-s and N-ss are the main electrical parameters that affect the Au/P3HT:PCBM/n-Si MPS SBD. Furthermore, a lower N-ss compared with that of other types of MPS SBDs in the literature was achieved by using the P3HT/PCBM layer. This lowering shows that high-quality electronic and optoelectronic devices may be fabricated by using the Au/P3HT:PCBM/n-Si MPS SBD. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.04.013en_US
dc.identifier.endpage454en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage448en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.04.013
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5903
dc.identifier.volume26en_US
dc.identifier.wosWOS:000344823400062en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectP3HT/PCBM organic-blend layeren_US
dc.subjectSchottky barrier diodesen_US
dc.subjectI-V characteristicsen_US
dc.titleElectrical and interfacial properties of Au/P3HT:PCBM/n-Si Schottky barrier diodes at room temperatureen_US
dc.typeArticleen_US

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