Gaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperatures

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dc.contributor.authorDurmuş, Perihan
dc.contributor.authorYıldırım, Mert
dc.date.accessioned2020-05-01T12:10:09Z
dc.date.available2020-05-01T12:10:09Z
dc.date.issued2014
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000345644000019en_US
dc.description.abstractForward bias current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diode (SBD) were investigated in the temperature range of 80-290 K. Analysis of temperature dependent I-V data in terms of thermionic emission (TE) theory revealed an abnormal increase in zero-bias barrier height (Phi(B0)) and decrease in ideality factor (n) with increasing temperature. Such behavior of Phi(B0) and n was attributed to barrier inhomogeneities by assuming a Gaussian distribution (GD) of barrier height. Therefore, mean barrier height and effective Richardson constant (A*) values were extracted from the modified Richardson plot, and extracted A* was found close to the theoretical value for n-type Si. Hence, it has been concluded that temperature dependent I-V characteristics of the SBD can be successfully explained on the basis of TE theory with GD of barrier height. In addition, series resistance and energy profile of density of interface traps in the SBD were also investigated. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.06.047en_US
dc.identifier.endpage149en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage145en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.06.047
dc.identifier.urihttps://hdl.handle.net/20.500.12684/6043
dc.identifier.volume27en_US
dc.identifier.wosWOS:000345644000019en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectI-V characteristicsen_US
dc.subjectlnhomogeneous barrieren_US
dc.subjectGaussian distribution of barrieren_US
dc.subjectModified Richardson ploten_US
dc.titleGaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperaturesen_US
dc.typeArticleen_US

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