Illumination Effects on Electrical Characteristics of Au/Bi4Ti3O12/n-Si Structures
Küçük Resim Yok
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Scientific Publishers
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The effects of illumination on electrical and photocurrent properties of Au/n-Si structures with and without Bi4Ti3O12 interfacial ferroelectric layer were investigated using current-voltage (I-V) and admittance measurements (C-V, G/omega-V). For this purpose, Au/n-Si metal-semiconductor (MS) and Au/Bi4Ti3O12/n-Si metal-ferroelectric-semiconductor (MFS) structures were fabricated and measured at dark and under various illumination intensity levels at room temperature. It was found that the ferroelectric interfacial layer increased the rectifying ratio by decreasing the leakage current and passivated the interface states. Furthermore, the photocurrent of MFS structure is more sensitive to illumination compared with that of MS structure, whereas the situation is opposite for interface states.
Açıklama
Gokcen, Muharrem/0000-0001-9063-3028
WOS: 000358931600004
WOS: 000358931600004
Anahtar Kelimeler
Ferroelectric, MFS Structures, Current-Voltage, Photocurrent, Interface States
Kaynak
Journal Of Nanoelectronics And Optoelectronics
WoS Q Değeri
Q3
Scopus Q Değeri
N/A
Cilt
10
Sayı
3
