Morphological, microstructural and electrical examinations on ZnO film on p-Si wafer

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dc.contributor.authorGökçen, Muharrem
dc.contributor.authorBal, S.
dc.contributor.authorYıldırım, Gürcan
dc.contributor.authorGülen, Mahir
dc.contributor.authorVarilci, Ahmet
dc.date.accessioned2020-04-30T23:19:21Z
dc.date.available2020-04-30T23:19:21Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionGokcen, Muharrem/0000-0001-9063-3028; Yildirim, Gurcan/0000-0002-5177-3703en_US
dc.descriptionWOS: 000309679600008en_US
dc.description.abstractThis study reports not only main electrical and dielectric characteristics of Ag/ZnO/p-Si heterostructure with the aid of the experimental admittance measurements at room temperature and theoretical approaches but also the microstructure and surface morphology of the heterostructure by means of X-ray diffraction, scanning electron microscopy and atomic force microscopy measurements. The results obtained show that the sample, obtaining Wurtzite structure with the (002) preferred orientation, has a fine crystalline microstructure consisting of micro-sized hexagonal rods growing uniformly in large scale on the film surface. When the diameters of the rods are found to vary from 0.5 mu m to 1.5 mu m, thickness values are observed to be about 2 mu m. Further, series resistance (R-s) and some other electronic parameters of the heterostructure are obtained by the capacitance-voltage (C-V), conductance-voltage (G-V) and C-2-V measurements. Moreover, voltage (V) and frequency (f) dependence of dielectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), real and imaginary parts of electric modulus (IeaEuro(2) and IeaEuro(3)) are determined and discussed. It is found that both electrical and dielectric parameters of the heterostructure prepared in this work depend strongly on the applied bias voltage and frequency.en_US
dc.description.sponsorshipAbant Izzet Baysal University Scientific Research Projects UnitAbant Izzet Baysal University [2011.03.02.434]en_US
dc.description.sponsorshipThis work is financially supported by the Abant Izzet Baysal University Scientific Research Projects Unit under contract number 2011.03.02.434.en_US
dc.identifier.doi10.1007/s10854-012-0690-0en_US
dc.identifier.endpage1979en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue11en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1971en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-012-0690-0
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3730
dc.identifier.volume23en_US
dc.identifier.wosWOS:000309679600008en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleMorphological, microstructural and electrical examinations on ZnO film on p-Si waferen_US
dc.typeArticleen_US

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