Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

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dc.authoridal-sehemi, Abdullah G/0000-0002-6793-3038en_US
dc.authoridYalcin, Mesut/0000-0002-6171-3018en_US
dc.authorscopusid57194075800en_US
dc.authorscopusid57216262162en_US
dc.authorscopusid7003661021en_US
dc.authorscopusid35791444100en_US
dc.authorscopusid58222475700en_US
dc.authorscopusid56398362600en_US
dc.authorscopusid7007086768en_US
dc.authorwosidElseedi, Hesham/KGK-5692-2024en_US
dc.authorwosidal-sehemi, Abdullah G/AAM-4039-2020en_US
dc.authorwosidYalcin, Mesut/C-8170-2018en_US
dc.contributor.authorYalcin, Mesut
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorErol, Ibrahim
dc.contributor.authorAksu, Mecit
dc.contributor.authorTillayev, Sanjar
dc.contributor.authorDere, Aysegul
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.date.accessioned2024-08-23T16:04:50Z
dc.date.available2024-08-23T16:04:50Z
dc.date.issued2024en_US
dc.departmentDüzce Üniversitesien_US
dc.description.abstractGO-doped LaB6 nanocomposite-based Al/p-Si/GO:LaB6/Al photodiodes were fabricated for the study. The electrical properties of the fabricated photodiodes were subjected to current-voltage and capacitance-voltage measurements. The ideality factors, barrier heights and series resistance values of photodiodes were calculated and compared using the Cheung-Cheung and Norde methods approaches. The lowest ideality factor values were calculated to be 4.75, 4.00 and 9.21 in the samples doped with GO at 1 %, 5 % and 10 %, respectively, and the highest barrier height values were calculated from the Norde function to be 0.75, 0.64 and 0.75 eV, respectively Additionally, the responsivity (R) and detectivity (D) values of the diodes were calculated. The R values of 1 %, 3 % and % 5 doped diodes were calculated as 2153, 6001 and 2042 mA/W at, 100 mW/cm(2), respectively. The D* values of 1 %, 3 % and % 5 doped diodes are calculated as 1.38 x 10(11), 3.85 x 10(11) and 1.31 x 10(11) Jones at 100 mW/cm(2), respectively. The interface state (Nss) of 1 %, 3 % and % 5 doped diodes were calculated as 2 x 10(13), 1.25 x 10(13) and 1.06 x 10(13)eV(-1) cm(-2), at 100 mW/cm(2), respectively. It can be concluded that the diodes produced in this study have potential for use in optoelectronic applications.en_US
dc.description.sponsorshipKing Khalid University [RCAMS/KKU/p002-21]; Firat University Scientific Research Projects Unit [ADEP-22.01]en_US
dc.description.sponsorshipThe authors acknowledge the support of King Khalid University for this research through grant no. RCAMS/KKU/p002-21 under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia and Firat University Scientific Research Projects Unit for this research through ADEP-22.01 grant.en_US
dc.identifier.doi10.1016/j.diamond.2023.110585
dc.identifier.issn0925-9635
dc.identifier.issn1879-0062
dc.identifier.scopus2-s2.0-85176274677en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.diamond.2023.110585
dc.identifier.urihttps://hdl.handle.net/20.500.12684/14385
dc.identifier.volume141en_US
dc.identifier.wosWOS:001113295900001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofDiamond And Related Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhotodiodeen_US
dc.subjectGOen_US
dc.subjectIdeality factoren_US
dc.subjectBarrier heighten_US
dc.subjectNanocompositeen_US
dc.subjectLaB6en_US
dc.subjectHeterojunctionen_US
dc.subjectPerformanceen_US
dc.subjectPhotodetectoren_US
dc.subjectAbsorptionen_US
dc.subjectUltrafasten_US
dc.subjectDiodesen_US
dc.subjectLighten_US
dc.subjectLayeren_US
dc.subjectFilmsen_US
dc.titleFabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocompositesen_US
dc.typeArticleen_US

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