Current conduction and steady-state photoconductivity in photodiodes with bismuth titanate interlayer

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dc.contributor.authorYıldırım, Mert
dc.date.accessioned2020-05-01T09:11:15Z
dc.date.available2020-05-01T09:11:15Z
dc.date.issued2016
dc.departmentDÜ, Mühendislik Fakültesi, Mekatronik Mühendisliği Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000381939700047en_US
dc.description.abstractBismuth titanate, Bi4Ti3O12 (BiT), has proven to be a suitable candidate for electro-optical applications, therefore present study aims to report its utility as a photodiode material through current conduction and steady-state photoconductivity investigations. For this purpose, Al/p-Si diodes having thin film BiT interlayer (10 and 25 nm) were fabricated and current-voltage measurements were held in dark and under illumination. Among the samples, better current-voltage characteristics were obtained for the sample with 10 nm BiT interlayer. Deposition of BiT interlayer modified the current conduction mechanism in the forward bias region and interface-limited injection was reported for the diodes with BiT interlayer in the high forward biases. Variation of photocurrent with illumination intensity suggested a supralinear recombination process for the samples with BiT interlayer. High responsivity (2.891 A/W) and photosensitivity (7318.7) values were obtained for the sample with 10 nm BiT interlayer at 250 mW/cm(2) illumination intensity. Obtained results suggest that BiT interlayer (10 nm) can be utilized for visible light photodiode and photosensor applications. (C) 2016 Published by Elsevier B.V.en_US
dc.identifier.doi10.1016/j.tsf.2016.07.040en_US
dc.identifier.endpage304en_US
dc.identifier.issn0040-6090
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage300en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2016.07.040
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5431
dc.identifier.volume615en_US
dc.identifier.wosWOS:000381939700047en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin filmsen_US
dc.subjectBismuth titanateen_US
dc.subjectMFS photodiodeen_US
dc.subjectCurrent conductionen_US
dc.subjectSteady-state photoconductivityen_US
dc.titleCurrent conduction and steady-state photoconductivity in photodiodes with bismuth titanate interlayeren_US
dc.typeArticleen_US

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