On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structures

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dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKaya, Ahmet
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T23:20:06Z
dc.date.available2020-04-30T23:20:06Z
dc.date.issued2014
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000340097400004en_US
dc.description.abstractThe dielectric properties, electric modulus and ac electrical conductivity (sigma(ac)) of Al/Co-doped (PVC + TCNQ)/p-Si structures have been investigated in the wide frequency and voltage range of 0.5 kHz-3 MHz and (-4 V)-( 9 V), respectively, using the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at room temperature. The real and imaginary parts of dielectric constant (epsilon ', epsilon ''), loss tangent (tan delta), sigma(ac) and the real and imaginary parts of electric modulus (M ', M '') were found strongly function of frequency and applied voltage especially at low frequencies. The epsilon '-V plot shows an anomalous peak in the forward bias region due to the series resistance (R-s), surface states (N-ss) and interfacial layer (PVC + TCNQ) effects for each frequency and then it goes to negative values known as negative dielectric constant (NDC) at low frequencies (f <= 70 kHz). Such observation of NDC is important result because it implies that an increment of bias voltage produces a decrease in the charge on the electrodes. The amount of negativity epsilon ' value increases with decreasing frequency and this decrement in the NDC corresponds to the increment in the epsilon ''.en_US
dc.identifier.doi10.1142/S0217979214501537en_US
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue23en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1142/S0217979214501537
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3930
dc.identifier.volume28en_US
dc.identifier.wosWOS:000340097400004en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofInternational Journal Of Modern Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAl/Co-doped (PVC | TCNQ)/p-Si structuresen_US
dc.subjectnegative dielectric constanten_US
dc.subjectdielectric propertiesen_US
dc.subjectelectric modulusen_US
dc.subjectac electrical conductivityen_US
dc.subjectfrequency and voltage dependenten_US
dc.titleOn the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structuresen_US
dc.typeArticleen_US

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