Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10-200 kHz

Basit Öğe Kaydı
dc.contributor.authorBaraz, Nalan
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKalandaragh, Yashar Azizian
dc.contributor.authorDemir, Gülçin Ersöz
dc.contributor.authorOrak, İkram
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorAkbari, Hossein
dc.date.accessioned2020-05-01T09:12:10Z
dc.date.available2020-05-01T09:12:10Z
dc.date.issued2017
dc.departmentDÜ, Orman Fakültesi, Orman Mühendisliği Bölümüen_US
dc.descriptionWOS: 000403016800064en_US
dc.description.abstractPure polyvinyl alcohol (PVA) capped ZnS semiconductor nanocrystals were prepared by microwave-assisted method, and the optical and structural properties of the as-prepared materials were characterized by x-ray diffraction (XRD) and Ultraviolet-visible (UV-Vis) techniques. The XRD pattern shows the formation of ZnS nanocrystals, and the UV-Vis spectroscopy results show a blue shift of about 1.2 eV in its band gap due to the confinement of very small nanostructures. The concentration of donor atoms (N (D)), diffusion potential (V (D)), Fermi energy level (E (F)), and barrier height (I broken vertical bar(B) (C-V)) values were obtained from the reverse bias C (-2)-V plots for each frequency. The voltage dependent profile of series resistance (R (s)) and surface states (N (ss)) were also obtained using admittance and low-high frequency methods, respectively. R (s)-V and N (ss)-V plots both have distinctive peaks in the depletion region due to the spatial distribution charge at the surface states. The effect of R (s) and interfacial layer on the C-V and G/omega-V characteristics was found remarkable at high frequencies. Therefore, the high frequency C-V and G/omega-V plots were corrected to eliminate the effect of R (s). The real and imaginary parts of dielectric constant (epsilon' and epsilon aEuro(3)) and electric modulus (M' and MaEuro(3)), loss tangent (tan delta), and ac electrical conductivity (sigma (ac)) were also obtained using C and G/omega data and it was found that these parameters are indeed strong functions of frequency and applied bias voltage. Experimental results confirmed that the N (ss), R (s) , and interfacial layer of the MPS structure are important parameters that strongly influence both the electrical and dielectric properties. The low values of N (ss) (similar to 10(9) eV(-1) cm(-2)) and the value of dielectric constant (epsilon' = 1.3) of ZnS-PVA interfacial layer even at 10 kHz are very suitable for electronic devices when compared with the SiO2. These results confirmed that the ZnS-PVA considerably improves the performance of Au/n-Si (MS) structure and also allow it to work as a capacitor, which stores electric charges or energy.en_US
dc.identifier.doi10.1007/s11664-017-5363-6en_US
dc.identifier.endpage4286en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue7en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage4276en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-017-5363-6
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5899
dc.identifier.volume46en_US
dc.identifier.wosWOS:000403016800064en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/ZnS-PVA/n-Si (MPS)en_US
dc.subjectelectrical and dielectric propertiesen_US
dc.subjectelectric modulus and ac electrical conductivityen_US
dc.subjectfrequency and voltage dependenceen_US
dc.subjectmicrowave-assisted methoden_US
dc.titleElectric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10-200 kHzen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
5899.pdf
Boyut:
2.21 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu