Organic/inorganic interfaced field-effect transistor properties with a novel organic semiconducting material

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dc.contributor.authorDemir, Ahmet
dc.contributor.authorAtahan, Alparslan
dc.contributor.authorBağcı, Sadık
dc.contributor.authorAslan, Metin
dc.contributor.authorIslam, M. Saif
dc.date.accessioned2020-04-30T23:20:23Z
dc.date.available2020-04-30T23:20:23Z
dc.date.issued2016
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS: 000371037600005en_US
dc.description.abstractA novel 1,3,4-oxadiazole-substituted benzo[b]triphenylene was synthesized by three-step synthetic procedure and OFET device design was successfully designed after theoretical calculations made using Gaussian software. For investigating the field-effect properties of designed organic electronic device, a SiO2 (300nm) was thermally grown on p-Si wafer at 1000 degrees C as a dielectric layer and gate, source and drain contacts have been deposited using Au metal with physical vapour deposition. 1,3,4-Oxadiazole-substituted benzo[b]triphenylene was spin coated on the source and drain electrodes of our device, forming organic/inorganic interfaced field-effect transistors. Surface morphology and thin film properties were investigated using AFM. All electrical measurements were done in air ambient. The device showed a typical p-type channel behaviour with increasing negative gate bias voltage values. Our results have surprisingly shown that the saturation regime of this device has high mobility (mu(FET)), excellent on/off ratio (I-on/I-off), high transconductance (g(m)) and a small threshold voltage (V-Th). The values of mu(FET), I-on/I-off, g(m) and V-Th were found as 5.02cm(2)/Vs, 0.7x10(3), 5.64 mu S/mm and 1.37V, respectively. These values show that our novel organic material could be a potential candidate for organic electronic device applications in the future.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectsDuzce University [2013.05.03.190]; Sakarya University Research ProjectsSakarya University [2014-02-02-001]en_US
dc.description.sponsorshipThis study was financially supported by Duzce University Scientific Research Projects (Project number: 2013.05.03.190) and Sakarya University Research Projects (project number: 2014-02-02-001). We are grateful to Hayriye GENC and Yusuf ATALAY for theoretical parameters.en_US
dc.identifier.doi10.1080/14786435.2015.1130277en_US
dc.identifier.endpage285en_US
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage274en_US
dc.identifier.urihttps://doi.org/10.1080/14786435.2015.1130277
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3996
dc.identifier.volume96en_US
dc.identifier.wosWOS:000371037600005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofPhilosophical Magazineen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectbenzo[b]triphenyleneen_US
dc.subjectthin filmen_US
dc.subjectorganic semiconductoren_US
dc.subjectOFETen_US
dc.subjectmobilityen_US
dc.subjectoxadiazoleen_US
dc.titleOrganic/inorganic interfaced field-effect transistor properties with a novel organic semiconducting materialen_US
dc.typeArticleen_US

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