On the Frequency-Voltage Dependence Profile of Complex Dielectric, Complex Electric Modulus and Electrical Conductivity in Al/ZnO/p-GaAs Type Structure at Room Temperature

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dc.contributor.authorYerişkin, Seçkin Altındal
dc.contributor.authorDemir, Gülçin Ersöz
dc.contributor.authorYücedağ, İbrahim
dc.date.accessioned2020-04-30T23:20:06Z
dc.date.available2020-04-30T23:20:06Z
dc.date.issued2019
dc.departmentDÜ, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000480420100013en_US
dc.description.abstractThe real and imaginary parts of complex dielectric parameters (epsilon', epsilon ''), complex electrical modulus (M', M ''), and ac electrical conductivity (sigma(ac)) of Al/ZnO/p-GaAs type structure were studied as a function of frequency and voltage through the Impedance Spectroscopy Method. For this purpose, both the capacitance (C) and conductance (G/omega) of the structure was carried out at wide frequency range (1 kHz-1 MHz) and voltage range (+/- 1.2 V). It is indicated that these parameters are considerably sensitive to relatively-low and medium frequency and voltage. The change of the parameters with frequency and voltage is thought to depend on circumstances of surface states (N-ss) and ZnO interlayer at the interface/semiconductor interface, interface-dipole polarization, and series resistance. While polarization and N-ss are active at low and medium frequency in the depletion and accumulation regions, series resistance (R-s) is active at high frequencies in the layer of accumulation. It is also found that epsilon', epsilon '', loss tangent (tan delta), and R-s decrease together with rising frequency whereas M', M '' and sigma(ac) increase under the same circumstances. The results indicated that interface-dipole polarization and N-ss can emerge more easily depending on the relaxation/lifetime of the surface states at low frequencies. The peak amplitude in the M '' - V graphics increase together with rising frequency and the peak locations move to the accumulation region because of the charges in the traps and relaxation polarization.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectsDuzce University [2017.07.02.567, 2013.07.02.204]en_US
dc.description.sponsorshipThis study was financially supported by Duzce University Scientific Research Projects (Project Numbers: 2017.07.02.567 and 2013.07.02.204).en_US
dc.identifier.doi10.1166/jno.2019.2623
dc.identifier.endpage1132en_US
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue8en_US
dc.identifier.startpage1126en_US
dc.identifier.urihttps://doi.org/10.1166/jno.2019.2623
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3931
dc.identifier.volume14en_US
dc.identifier.wosWOS:000480420100013en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.relation.ispartofJournal Of Nanoelectronics And Optoelectronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectComplex Dielectric Parameters (epsilon ', epsilon '')en_US
dc.subjectComplex Electric Modulusen_US
dc.subjectAl/ZnO/p-GaAs Type Structureen_US
dc.subjectThe Influence of ZnO Interlayeren_US
dc.subjectSeries Resistance (R-s)en_US
dc.subjectAC Electrical Conductivity (sigma(ac))en_US
dc.subjectPolarization on the Impedance Measurementsen_US
dc.titleOn the Frequency-Voltage Dependence Profile of Complex Dielectric, Complex Electric Modulus and Electrical Conductivity in Al/ZnO/p-GaAs Type Structure at Room Temperatureen_US
dc.typeArticleen_US

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