On the Frequency-Voltage Dependence Profile of Complex Dielectric, Complex Electric Modulus and Electrical Conductivity in Al/ZnO/p-GaAs Type Structure at Room Temperature
Küçük Resim Yok
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Scientific Publishers
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The real and imaginary parts of complex dielectric parameters (epsilon', epsilon ''), complex electrical modulus (M', M ''), and ac electrical conductivity (sigma(ac)) of Al/ZnO/p-GaAs type structure were studied as a function of frequency and voltage through the Impedance Spectroscopy Method. For this purpose, both the capacitance (C) and conductance (G/omega) of the structure was carried out at wide frequency range (1 kHz-1 MHz) and voltage range (+/- 1.2 V). It is indicated that these parameters are considerably sensitive to relatively-low and medium frequency and voltage. The change of the parameters with frequency and voltage is thought to depend on circumstances of surface states (N-ss) and ZnO interlayer at the interface/semiconductor interface, interface-dipole polarization, and series resistance. While polarization and N-ss are active at low and medium frequency in the depletion and accumulation regions, series resistance (R-s) is active at high frequencies in the layer of accumulation. It is also found that epsilon', epsilon '', loss tangent (tan delta), and R-s decrease together with rising frequency whereas M', M '' and sigma(ac) increase under the same circumstances. The results indicated that interface-dipole polarization and N-ss can emerge more easily depending on the relaxation/lifetime of the surface states at low frequencies. The peak amplitude in the M '' - V graphics increase together with rising frequency and the peak locations move to the accumulation region because of the charges in the traps and relaxation polarization.
Açıklama
WOS: 000480420100013
Anahtar Kelimeler
Complex Dielectric Parameters (epsilon ', epsilon ''), Complex Electric Modulus, Al/ZnO/p-GaAs Type Structure, The Influence of ZnO Interlayer, Series Resistance (R-s), AC Electrical Conductivity (sigma(ac)), Polarization on the Impedance Measurements
Kaynak
Journal Of Nanoelectronics And Optoelectronics
WoS Q Değeri
Q4
Scopus Q Değeri
Cilt
14
Sayı
8
