Investigation of the Performance of Poly(Methyl-Acrylate) as a Gate Dielectric in Organic Thin-Film Transistors

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dc.authoridYucedag, Ibrahim/0000-0003-2975-7392
dc.authoridYardim, Tayfun/0000-0002-5223-9801
dc.authorwosidYucedag, Ibrahim/ABI-4140-2020
dc.contributor.authorYardim, Tayfun
dc.contributor.authorDemir, Ahmet
dc.contributor.authorAlli, Sema
dc.contributor.authorAlli, Abdulkadir
dc.contributor.authorYucedag, Ibrahim
dc.date.accessioned2021-12-01T18:46:54Z
dc.date.available2021-12-01T18:46:54Z
dc.date.issued2020
dc.department[Belirlenecek]en_US
dc.description.abstractIn this study, we present two regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT)-based top-gate bottom-contact configured organic thin-film transistors (OTFTs) using poly(alpha-methyl acrylate) (PMA) and poly(methyl methacrylate) (PMMA) polymers separately as gate insulators for comparison. In order to compare only the performance of the dielectrics, the other parts of the devices were kept qualitatively and quantitatively identical. Unlike PMMA, PMA is flexible, and flexibility is a desirable property for an OTFT. Thus, utilizing PMA can be advantageous if it supports higher performance of the transistor. In this respect, the electronic parameters of the fabricated devices were extracted from transfer and output characteristics to determine the performance of PMA in OTFT applications. Results showed that the mobility of the OTFT with PMA (PMA-OTFT) was nearly three times greater than that of the OTFT with PMMA (PMMA-OTFT), while the PMA-OTFT threshold voltage (V-TH) was slightly less than that of the PMMA-OTFT, which was likely because of the greater effective capacitance (C-EFF) of the PMA layer compared to that of the PMMA layer. This is the main advantage of the PMA. On the other hand, the major downside is found in the reduced on-to-off current (I-ON/I-OFF) and increased subthreshold swing originating from a huge off-current (I-OFF), implying the existence of a large gate leakage current. Increasing the thickness of the PMA layer could reduce such large gate leakage current. However, this would lead to additional increase in the OTFT operating voltage. Therefore, further studies are required to improve the insulating property of the PMA polymer in order to substitute it for the PMMA.en_US
dc.description.sponsorshipDuzce University Scientific Research Projects unitDuzce University [2017.07.02.621, 2015.05.03.381]en_US
dc.description.sponsorshipThis work was supported by the Duzce University Scientific Research Projects unit under Grant (2017.07.02.621) and (2015.05.03.381).en_US
dc.identifier.doi10.1007/s11664-020-08090-1
dc.identifier.endpage3836en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-85082869855en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage3830en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-020-08090-1
dc.identifier.urihttps://hdl.handle.net/20.500.12684/10043
dc.identifier.volume49en_US
dc.identifier.wosWOS:000523091200003en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGate dielectricen_US
dc.subjectmobilityen_US
dc.subjectorganic thin-film transistor (OTFT)en_US
dc.subjectpoly(alpha-methyl acrylate) (PMA)en_US
dc.subjectflexible polymeren_US
dc.subjectField-Effect Transistorsen_US
dc.subjectSemiconductor Thicknessen_US
dc.subjectPolymeren_US
dc.subjectInsulatoren_US
dc.subjectMobilityen_US
dc.subjectLayeren_US
dc.titleInvestigation of the Performance of Poly(Methyl-Acrylate) as a Gate Dielectric in Organic Thin-Film Transistorsen_US
dc.typeArticleen_US

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