Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes

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dc.authoridal-sehemi, Abdullah G/0000-0002-6793-3038en_US
dc.authoridAl-Ghamdi, Ahmed/0000-0002-5409-3770en_US
dc.authoridOcaya, R.O./0000-0002-5925-588X;en_US
dc.authorscopusid6504496923en_US
dc.authorscopusid57216262162en_US
dc.authorscopusid9337459000en_US
dc.authorscopusid56398362600en_US
dc.authorscopusid7003661021en_US
dc.authorscopusid35791444100en_US
dc.authorscopusid7007086768en_US
dc.authorwosidElseedi, Hesham/KGK-5692-2024en_US
dc.authorwosidal-sehemi, Abdullah G/AAM-4039-2020en_US
dc.authorwosidOcaya, R.O./AAO-5540-2020en_US
dc.authorwosidAl-Ghamdi, Ahmed/A-1324-2015en_US
dc.authorwosidYakuphanoglu, Fahrettin/C-8365-2012en_US
dc.contributor.authorOcaya, Richard O.
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorTataroglu, Adem
dc.contributor.authorDere, Aysegul
dc.contributor.authorErol, Ibrahim
dc.contributor.authorAksu, Mecit
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.date.accessioned2024-08-23T16:04:35Z
dc.date.available2024-08-23T16:04:35Z
dc.date.issued2023en_US
dc.departmentDüzce Üniversitesien_US
dc.description.abstractThis study investigates the fabrication and performance analysis of Al/CuO:LaB6/p-Si/Al diodes with CuO-doped LaB6 interlayer films of varying concentrations (1%, 5%, and 10%). Experimental evidence demonstrates the limitations of 0% CuO doping, as pure LaB6 lacks a significant barrier height, resulting in ohmic behavior unsuitable for intended applications. Through comprehensive analyses under varying illuminations (20-100 mW/cm2) and frequencies (10 kHz-1 MHz), the study reveals that controlling CuO doping in LaB6 significantly enhances the effective barrier height at the LaB6:CuO heterojunction, improving rectification properties. This enhancement enables the diode to be well-suited for high-speed photonic devices utilizing one-step photoemission. The findings contribute to the development of high-performance LaB6-based devices, advancing photonic technologies by emphasizing the advantages of CuO doping.en_US
dc.description.sponsorshipKing Khalid University, Saudi Arabia under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia [ADEP-22.01]; Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia; FIRAT University Scientific Research Projects Unit, Turkey [FF.12.19, FF.22.17]; [RCAMS/KKU/p002-21]en_US
dc.description.sponsorshipThe authors acknowledge the support of King Khalid University, Saudi Arabia for this research through grant no. RCAMS/KKU/p002-21 under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia. Also, the authors would like to acknowledge the support of FIRAT University Scientific Research Projects Unit, Turkey for this research through ADEP-22.01, FF.12.19, and FF.22.17 grants.en_US
dc.identifier.doi10.1016/j.physb.2023.415111
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85166019929en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2023.415111
dc.identifier.urihttps://hdl.handle.net/20.500.12684/14278
dc.identifier.volume666en_US
dc.identifier.wosWOS:001055396500001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectOne-step photoemissionen_US
dc.subjectCopper oxide (CuO)en_US
dc.subjectLanthanum hexaboride (LaB6)en_US
dc.subjectPhotonic deviceen_US
dc.subjectTransient responseen_US
dc.subjectFrequency effecten_US
dc.subjectSi Schottky Diodesen_US
dc.subjectSeries Resistanceen_US
dc.subjectInterface Statesen_US
dc.subjectElectron Sourceen_US
dc.subjectField-Emissionen_US
dc.subjectThin-Filmsen_US
dc.subjectSurfaceen_US
dc.titleEffect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodesen_US
dc.typeArticleen_US

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