PENTACENE-BASED ORGANIC THIN FILM TRANSISTOR WITH SiO2 GATE DIELECTRIC

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dc.contributor.authorDemir, Ahmet
dc.contributor.authorBağcı, Sadık
dc.contributor.authorSan, Sait Eren
dc.contributor.authorDoğruyol, Zekeriya
dc.date.accessioned2020-04-30T23:20:40Z
dc.date.available2020-04-30T23:20:40Z
dc.date.issued2015
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS: 000354413700006en_US
dc.description.abstractAn organic thin film transistor (OTFT) based on pentacene was fabricated with SiO2 as the gate dielectric material. We have investigated the effects of the thickness of pentacene layer and the organic semiconductor (OSC) material on OTFT devices at two different thicknesses. Au metal was deposited for gate, source and drain contacts of the device by using thermal evaporation method. Pentacene thin film layer was also prepared with thermal evaporation. Our study has shown that the change in pentacene thickness makes a noteworthy difference on the field effect mobility (mu(FET)), values, threshold voltages (V-T) and on/off current ratios (I-on/I-off). OTFTs exhibited saturation at the order of mu(FET) of 3.92 cm(2)/Vs and 0.86 cm(2)/Vs at different thicknesses. I-on/I-off and V-T are also thickness dependent. I-on/I-off is 1 x 10(3), 2 x 10(2) and V-T is 15 V, 27 V of 40 nm and 60 nm, respectively. The optimized thickness of the pentacene layer was found as 40 nm. The effect of the OSC layer thickness on the OTFT performance was found to be conspicuous.en_US
dc.description.sponsorshipSakarya University Research Project UnitSakarya University [2013-02-02-009]; Duzce University Research Project UnitDuzce University [2013.05.02.195]en_US
dc.description.sponsorshipThis work has been supported financially by Sakarya University Research Project Unit under project No. 2013-02-02-009, and Duzce University Research Project Unit under project No. 2013.05.02.195. Authors thank Prof. Salih Okur for his support with his facilities during Pentacene deposition.en_US
dc.identifier.doi10.1142/S0218625X15500389en_US
dc.identifier.issn0218-625X
dc.identifier.issn1793-6667
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1142/S0218625X15500389
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4053
dc.identifier.volume22en_US
dc.identifier.wosWOS:000354413700006en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofSurface Review And Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOTFTen_US
dc.subjectpentaceneen_US
dc.subjectSiO2en_US
dc.subjectthicknessen_US
dc.subjectmobilityen_US
dc.titlePENTACENE-BASED ORGANIC THIN FILM TRANSISTOR WITH SiO2 GATE DIELECTRICen_US
dc.typeArticleen_US

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