Organik arayüzeyli Schottky diyotların hazırlanması, elektriksel ve dielektrik özelliklerinin geniş bir frekans aralığında incelenmesi
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Dosyalar
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Düzce Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Au/PPy/n-Si Schottky bariyer diyotlar (SBD) organik buharlaştırma tekniği sayesinde n-Si üzerine Polyprrole (PPy) organic katmanı oluşturarak üretildi. Yapının dielektrik sabiti (?'), dielektrik kaybı (?''), kayıp tanjantı (tan?), elektrik modülüsün gerçek ve sanal kısımları (M' and M'') ve ac elektriksel iletkenlik parametreleri (?ac)'nin frekansa bağlılığı 10kHz-500kHz frekans aralığında incelendi. Artan frekansla birlikte; ?ac, M' ve M'' değerlerinde artış gözlenirken, ?', ?'' ve tan? değerlerinde azalma görülür. Bunun yanısıra, tan? ve M'' yaklaşık sıfır ön geriliminde artan frekansla azalan bir peak gösterir. Artan gerilimle birlikte; ?'', tan?, ?ac ve M'' değerlerinde olurken gelirken, ?' ve M' değerlerinde azalma olur. ?', ?'', tan?, M', M'' ve ?ac değerlerindeki bu değişiklik yüzey yükü polarizasyonuna ve özellikle de PPy/n-Si arayüzeyine yerleşmiş yüzey durumları yoğunluk dağılımına atfedilir.
Au/PPy/n-Si Schottky barrier diodes SBDs were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the organic evaporating technique. Frequency dependent dielectric constant (?'), dielectric loss (?''), loss tangent (tan?), real and imaginary parts of electrical modulus (M' and M'') and AC electrical conductivity (?ac) parameters of the structure were investigated in the frequency range of 10kHz-500kHz. It was found that the values of the ?', ?'' and tan?, in general, decrease with increasing frequency while an increase is observed in ?ac, M' and M''. The tan? and M'' also exhibit a peak at about zero-bias voltage while peak intensity weakens with increasing frequency. The values of ?' and M' decrease with increasing voltage while an increase is observed in ?'', tan?, ?ac and M''. These changes in ?', ?'', tan?, M', M'' and ?ac values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.
Au/PPy/n-Si Schottky barrier diodes SBDs were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the organic evaporating technique. Frequency dependent dielectric constant (?'), dielectric loss (?''), loss tangent (tan?), real and imaginary parts of electrical modulus (M' and M'') and AC electrical conductivity (?ac) parameters of the structure were investigated in the frequency range of 10kHz-500kHz. It was found that the values of the ?', ?'' and tan?, in general, decrease with increasing frequency while an increase is observed in ?ac, M' and M''. The tan? and M'' also exhibit a peak at about zero-bias voltage while peak intensity weakens with increasing frequency. The values of ?' and M' decrease with increasing voltage while an increase is observed in ?'', tan?, ?ac and M''. These changes in ?', ?'', tan?, M', M'' and ?ac values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.
Açıklama
YÖK Tez No: 394472
Anahtar Kelimeler
Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering, Dielektrik özellikler, Dielectric properties, Elektriksel iletkenlik, Electrical conductivity, Polipirol, Polypyrrole, Schottky diyodları, Schottky diodes
