Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

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dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKaya, Ahmet
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.date.accessioned2020-05-01T12:10:07Z
dc.date.available2020-05-01T12:10:07Z
dc.date.issued2014
dc.departmentDÜ, Teknoloji Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000335646200076en_US
dc.description.abstractIn order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (D-it) effects, Al/pSi Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or epsilon '-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (R-s), and interfacial layer. Both the real and imaginary parts of dielectric constant (epsilon ' and epsilon '') and electric modulus (M ' and M ''), loss tangent (tan delta), and AC electrical conductivity (sigma(ac)) are investigated, each as a function of frequency and applied bias voltage. Each of the M ' versus V and M '' versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.en_US
dc.identifier.doi10.1088/1674-1056/23/4/047304
dc.identifier.issn1674-1056
dc.identifier.issn1741-4199
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1088/1674-1056/23/4/047304
dc.identifier.urihttps://hdl.handle.net/20.500.12684/6013
dc.identifier.volume23en_US
dc.identifier.wosWOS:000335646200076en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofChinese Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAl/Co-PVA/p-Si (MPS)en_US
dc.subjectelectrical and dielectric propertiesen_US
dc.subjectAC electrical conductivityen_US
dc.subjectfrequency and voltage dependenceen_US
dc.titleFrequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperatureen_US
dc.typeArticleen_US

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