Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature

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dc.authoridYucedag, Ibrahim/0000-0003-2975-7392
dc.authorwosidDemir, Gulcin Ersoz/AAQ-1487-2021
dc.authorwosidYucedag, Ibrahim/ABI-4140-2020
dc.contributor.authorErsoz Demir, Gulcin
dc.contributor.authorYucedag, Ibrahim
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2021-12-01T18:49:35Z
dc.date.available2021-12-01T18:49:35Z
dc.date.issued2020
dc.department[Belirlenecek]en_US
dc.description.abstractIn order to improve and detailedly investigate the dielectric properties of polymer interfaces of Metal-Polymer-Semiconductor (MPS) structures, three types of MPS were fabricated by doping 1, 3 and 5% graphene (Gr) into the polyvinyl alcohol (PVA) interface material. Capacitance-Voltage (C-V) and Conductance-Voltage (G/omega-V) measurements were used to analyze the dielectric properties of three types of MPS. UsingC-Vand G/omega-V data, series resistance (R-s) affecting device performance and interface properties besides basic dielectric parameters of each structure such as both the real and imaginary components of complex dielectric constant (epsilon'and epsilon''), complex electrical modulus (M' and M''), loss tangent (tan delta), and ac electrical conductivity (sigma(ac)) were also calculated. The effect of graphene doping was examined for each parameter and obtained results were compared at both low (0.1 MHz) and high (1 MHz) frequencies. It was observed that epsilon and epsilon'' decreased with increasing graphene doping at both 0.1 and 1 MHz, while M' and M'' increased under same conditions. Moreover, both the M' and M'' vs V plots have two distinctive peaks between -2.0 V and 0.0 V due to a special density distribution of surface states between (Gr-PVA) and p-Si. The tan delta gradually increased with increasing graphene doping at only 0.1 MHz. As the doping ratio of graphene increases, the charge carriers in the structure generate more dipoles and create an earlier relaxation process. In other words, increasing the doping ratio helps to improve the series resistance effects in MPS structures. As a result, it was seen that the interfacial properties of MPS structures were improved by increasing the rate of graphene doping.en_US
dc.description.sponsorshipGazi University Scientific Research Center [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipAll authors would like to thank Gazi University Scientific Research Center for the supports and contributions (Project No: GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1007/s10854-020-04181-1
dc.identifier.endpage16331en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue19en_US
dc.identifier.scopus2-s2.0-85089366245en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage16324en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-04181-1
dc.identifier.urihttps://hdl.handle.net/20.500.12684/10747
dc.identifier.volume31en_US
dc.identifier.wosWOS:000559375500009en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky-Barrier Diodesen_US
dc.subjectElectric Modulusen_US
dc.subjectAc Conductivityen_US
dc.subjectFrequencyen_US
dc.subjectImpedanceen_US
dc.titleInvestigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperatureen_US
dc.typeArticleen_US

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