Photoconductivity kinetics in AgIn5S8 thin films

dc.contributor.authorQasrawi, A.F.
dc.contributor.authorKayed, Tarek S.
dc.contributor.authorErcan, İsmail
dc.date.accessioned2020-04-30T23:20:55Z
dc.date.available2020-04-30T23:20:55Z
dc.date.issued2010
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionKayed, Tarek S/0000-0003-3482-4166; Ercan, ismail/0000-0001-6490-3792; Qasrawi, Atef/0000-0001-8193-6975en_US
dc.descriptionWOS: 000283954000034en_US
dc.description.abstractThe temperature (T) and illumination intensity (F) effects on the photoconductivity of as grown and heat-treated AgIn5S8 thin films has been investigated. At fixed illumination intensity, in the temperature region of 40-300K, the photocurrent (I-ph) of the films was observed to decrease with decreasing temperature. The I-ph of the as grown sample behaved abnormally in the temperature region of 170-180K. At fixed temperature and variable illumination intensity, the photocurrent of the as grown sample exhibited linear, sublinear and supralinear recombination mechanisms at 300 K and in the regions of 160-260K and 25-130 K. respectively. This behavior is attributed to the exchange of role between the linear recombination at the surface near room temperature and trapping centers in the film which become dominant as temperature decreases. Annealing the sample at 350 K for 1 h improved the characteristic curves of I-ph. The abnormality disappeared and the I-ph - T dependence is systematic. The data analysis of which revealed two recombination centers located at 66 and 16 meV. In addition, the sublinear recombination mechanism disappeared and the heat-treated films exhibited supralinear recombination in most of the studied temperature range. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2010.08.051en_US
dc.identifier.endpage383en_US
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage380en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2010.08.051
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4104
dc.identifier.volume508en_US
dc.identifier.wosWOS:000283954000034en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal Of Alloys And Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin filmsen_US
dc.subjectVapor depositionen_US
dc.subjectSemiconductorsen_US
dc.subjectX-ray diffractionen_US
dc.titlePhotoconductivity kinetics in AgIn5S8 thin filmsen_US
dc.typeArticleen_US

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