Studies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer

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dc.contributor.authorTunç, Tuncay
dc.contributor.authorGökçen, Muharrem
dc.contributor.authorUslu, İbrahim
dc.date.accessioned2020-04-30T23:32:16Z
dc.date.available2020-04-30T23:32:16Z
dc.date.issued2012
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionTunc, Tuncay/0000-0002-3576-2633; Gokcen, Muharrem/0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim/0000-0001-8976-571Xen_US
dc.descriptionWOS: 000310316800020en_US
dc.description.abstractThe admittance technique was used in order to investigate the frequency dependence of dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), the ac electrical conductivity (sigma (ac)), and the electric modulus of PVA (Ni-doped) structure. Experimental results revealed that the values of epsilon' , epsilon aEuro(3), (tan delta), sigma (ac) and the electric modulus show fairly large frequency and gate bias dispersion due to the interface charges and polarization. The sigma (ac) is found to increase with both increasing frequency and voltage. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal-polymer-semiconductor (MIS) structures especially at low frequencies and in depletion and accumulation regions. The results of this study indicate that the epsilon' values of Au/PVA/n-Si with Nickel-doped PVA interfacial layer are quite higher compared to those with pure and other dopant/mixture's of PVA.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectDuzce University [2012.05.02.110]en_US
dc.description.sponsorshipThis work is supported by Duzce University Scientific Research Project (Project no. 2012.05.02.110).en_US
dc.identifier.doi10.1007/s00339-012-7087-zen_US
dc.identifier.endpage653en_US
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage649en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-012-7087-z
dc.identifier.urihttps://hdl.handle.net/20.500.12684/4664
dc.identifier.volume109en_US
dc.identifier.wosWOS:000310316800020en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Heidelbergen_US
dc.relation.ispartofApplied Physics A-Materials Science & Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleStudies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layeren_US
dc.typeArticleen_US

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