Current-voltage characteristics of nano whisker ZnO/Si heterojunction under UV exposition

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dc.authorid, cevher/0000-0003-4740-1138
dc.authoridGökçen, Muharrem/0000-0001-9063-3028
dc.authoriddogruer, musa/0000-0002-4214-9159
dc.authorwosiddoğruer, musa/GPW-6970-2022
dc.authorwosid, cevher/HJP-4408-2023
dc.authorwosidGökçen, Muharrem/A-1235-2016
dc.contributor.authorKoç, Nevin Soylu
dc.contributor.authorAltıntaş, Sevgi Polat
dc.contributor.authorGökçen, Muharrem
dc.contributor.authorDoğruer, Musa
dc.contributor.authorAltuğ, Cevher
dc.contributor.authorVarilci, Ahmet
dc.date.accessioned2023-07-26T11:51:31Z
dc.date.available2023-07-26T11:51:31Z
dc.date.issued2022
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn/ZnO/p-Si heterojunction diode was produced to investigate the photo-responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis technique was used to coat the ZnO layer on the p-Si single crystal as nanowhisker/rods. The formation of surface and nanowhisker properties of the ZnO layer were investigated by scanning electron microscope (SEM). The I-V (current-voltage) analysis of the In/ZnO/p-Si diode was realized in dark and under UV (290-400 nm) illumination. Further, the main electrical parameters of the diode; such as reverse bias saturation current (I-V), ideality factor (n), zero bias barrier height (Phi(Bo)), resistance (R) and interface state density (N-ss) were obtained from the experimental I-V measurements by thermionic emission (TE) and Card and Rhoderick's function. Also, the power law of the photocurrents (I-PC), photoresponsivity (PR) and response time were extracted. Photo-responsivity and response time values of In/ZnO/p-Si heterojunction diode were obtained as 2.0 A/W and (rise/decay) 160/200 ms, respectively.en_US
dc.identifier.doi10.1016/j.sna.2022.113618
dc.identifier.issn0924-4247
dc.identifier.issn1873-3069
dc.identifier.scopus2-s2.0-85130562238en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.sna.2022.113618
dc.identifier.urihttps://hdl.handle.net/20.500.12684/12575
dc.identifier.volume342en_US
dc.identifier.wosWOS:000807773200005en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorGökçen, Muharrem
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofSensors and Actuators A-Physicalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmz$2023V1Guncelleme$en_US
dc.subjectZno Nanorod/Whisker; Photodiode; Uv Illumination; P-Si/Zno; Photo-Responsivityen_US
dc.subjectThin-Film; Si; Photodegradation; Diode; Darken_US
dc.titleCurrent-voltage characteristics of nano whisker ZnO/Si heterojunction under UV expositionen_US
dc.typeArticleen_US

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