Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures

Basit Öğe Kaydı
dc.contributor.authorBaraz, Nalan
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorKalandaragh, Yashar Azizian
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-05-01T09:11:23Z
dc.date.available2020-05-01T09:11:23Z
dc.date.issued2017
dc.departmentDÜ, Orman Fakültesi, Orman Mühendisliği Bölümüen_US
dc.descriptionWOS: 000394232600022en_US
dc.description.abstractWe have studied electrical and dielectric parameters of the Al/ZnS-PVA/p-Si structures using admittance measurements. For this aim, capacitance/conductance-voltage (C/G-V) measurements were performed in the frequency range of 10 kHz-5 MHz and voltages (+/- 4 V) by 50 mV steps at 300 K. Experimental results confirmed that both electric and dielectric parameters are strong function of frequency and voltage and they are especially influenced from series resistance (R-s), surface states (N-ss) and polarization processes. The values of R-s and N-ss which are obtained from the Nicollian and Brews and Hill-Coleman method, respectively, and they are decrease with increasing frequency almost as exponentially. In addition, the values of real and imaginary part of the dielectric constants (epsilon' and epsilon '') and electric modules (M' and M ''), loss tangent (tan delta), and ac electrical conductivity (sigma(ac)) were obtained using C and G/omega data as function of applied bias voltage and they are found to a strong functions of frequency. While the values of epsilon', epsilon '', and tand increase with increasing frequency, M' and rac decrease. Moreover, the epsilon', epsilon '', tand, and rac increase with applied bias voltage, whereas the M' decreases with increasing applied bias voltage. The M '' versus V plot shows a peak and its position shifts to the right with increasing bias voltage and it disappears at high frequencies. As a result, the change in the epsilon', epsilon '', tan delta, M', M '' and rac is a result of restructuring and reordering of charges at the (ZnS-PVA)/p-Si interface under an external electric field or voltage and interface polarization.en_US
dc.identifier.doi10.1007/s10854-016-5662-3en_US
dc.identifier.endpage1321en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1315en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-016-5662-3
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5552
dc.identifier.volume28en_US
dc.identifier.wosWOS:000394232600022en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleDetermining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structuresen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
5552.pdf
Boyut:
1.42 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu