Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p-Si and Al/Bi4Ti3O12/p-Si structures by using the admittance spectroscopy method

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dc.contributor.authorYıldırım, Mert
dc.contributor.authorDurmuş, Perihan
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-04-30T22:39:19Z
dc.date.available2020-04-30T22:39:19Z
dc.date.issued2013
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionYILDIRIM, Mert/0000-0002-8526-1802en_US
dc.descriptionWOS: 000326616700101en_US
dc.description.abstractIn this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states (N-ss), the values of series resistance (R-s), and AC electrical conductivity (sigma(ac)) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. In addition, the effect of interfacial Bi4Ti3O12 (BTO) layer on the performance of the structure is investigated. The voltage-dependent profiles of N-ss and R-s are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that N-ss and R-s, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of N-ss and the reordering and restructuring of N-ss under the effect of temperature. The values of activation energy (E-a), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the E-a of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal-semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (N-A), built-in potential (V-bi), Fermi energy (E-F), image force barrier lowering (Delta Phi(b)), and barrier height (Phi(b)), are extracted using reverse bias C-2-V characteristics as a function of temperature.en_US
dc.identifier.doi10.1088/1674-1056/22/10/108502en_US
dc.identifier.issn1674-1056
dc.identifier.issn1741-4199
dc.identifier.issue10en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1088/1674-1056/22/10/108502
dc.identifier.urihttps://hdl.handle.net/20.500.12684/2683
dc.identifier.volume22en_US
dc.identifier.wosWOS:000326616700101en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofChinese Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMFS structuresen_US
dc.subjectBismuth titanateen_US
dc.subjecttemperature dependenten_US
dc.subjectactivation energyen_US
dc.subjectAC electrical conductivityen_US
dc.titleAnalyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p-Si and Al/Bi4Ti3O12/p-Si structures by using the admittance spectroscopy methoden_US
dc.typeArticleen_US

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