The Preparation of Transparent Organic Field Effect Transistor Using a Novel EDOT Functional Styrene Copolymer Insulator With a PEDOT:PSS Gate Electrode
dc.contributor.author | Günaydın, Okan | |
dc.contributor.author | Demir, Ahmet | |
dc.contributor.author | Demir, Gülçin Ersöz | |
dc.contributor.author | Yücedağ, İbrahim | |
dc.contributor.author | Coşut, Bünyemin | |
dc.date.accessioned | 2020-04-30T23:34:03Z | |
dc.date.available | 2020-04-30T23:34:03Z | |
dc.date.issued | 2018 | |
dc.department | DÜ, Fen-Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.description | COSUT, Bunyemin/0000-0001-6530-0205 | en_US |
dc.description | WOS: 000425986300011 | en_US |
dc.description.abstract | In this study, we have purposed to combine both polystyrene (PS) and 3,4-ethylenedioxythiophene (EDOT) groups as a gate dielectric and to fabricate a transparent organic field effect transistor (OFET) device with polymeric gate electrode using this novel organic dielectric material. The focus point of this work is to obtain a transparent OFET and to minimize the interface states between gate insulator and gate electrode. Firstly, we have synthesized EDOT functional polystyrene (PS-EDOT) copolymer as gate insulator via "click" chemistry between azide-functional styrene copolymer and propargyl-functionalized EDOT. We used the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) conductive polymer mixture as a suitable alternative gate electrode instead of inorganic contacts, which is a new topic in the organic electronics. The contact resistance value was measured as 1/600 (S/cm)(-1). At the end of the process transparent OFETs with different channel length were fabricated using spin coating method by which poly(3-hexylthiophene) (P3HT), novel PS-EDOT copolymer insulator and PEDOT:PSS were coated on prepatterned OFET substrate. Electrical characterizations of OFET devices were held in total darkness and in air ambient in order to achieve output and transfer current-voltage (I-V) characteristics. The main parameters such as the threshold voltage (V (Th) ), field effect mobility (mu FET) and current on/off ratio (I (on/off) ) of the devices were extracted from capacitance-frequency (C-f) plot. It was found that fabricated PS-EDOT OFETs exhibit good device performances such as low V (Th) , remarkable mobility, and I (on/off) values. | en_US |
dc.description.sponsorship | Duzce University BAP research ProjectDuzce University [2015.07.03.350] | en_US |
dc.description.sponsorship | This work was supported by Duzce University BAP research Project with 2015.07.03.350 number. | en_US |
dc.identifier.doi | 10.1007/s13233-018-6023-2 | en_US |
dc.identifier.endpage | 172 | en_US |
dc.identifier.issn | 1598-5032 | |
dc.identifier.issn | 2092-7673 | |
dc.identifier.issue | 2 | en_US |
dc.identifier.scopusquality | Q2 | en_US |
dc.identifier.startpage | 164 | en_US |
dc.identifier.uri | https://doi.org/10.1007/s13233-018-6023-2 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12684/5095 | |
dc.identifier.volume | 26 | en_US |
dc.identifier.wos | WOS:000425986300011 | en_US |
dc.identifier.wosquality | Q3 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.relation.ispartof | Macromolecular Research | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | organic field-effect transistor (OFET) | en_US |
dc.subject | polymer-matrix composites (PMCs) | en_US |
dc.subject | thin films | en_US |
dc.subject | electrical properties | en_US |
dc.subject | mobility | en_US |
dc.subject | surface treatments | en_US |
dc.subject | "click" chemistry | en_US |
dc.subject | polystyrene | en_US |
dc.subject | EDOT | en_US |
dc.title | The Preparation of Transparent Organic Field Effect Transistor Using a Novel EDOT Functional Styrene Copolymer Insulator With a PEDOT:PSS Gate Electrode | en_US |
dc.type | Article | en_US |
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