Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Basit Öğe Kaydı
dc.contributor.authorDurmuş, Perihan
dc.contributor.authorBilkan, Çiğdem
dc.contributor.authorYıldırım, Mert
dc.date.accessioned2020-05-01T09:11:57Z
dc.date.available2020-05-01T09:11:57Z
dc.date.issued2017
dc.departmentDÜ, Mühendislik Fakültesi, Mekatronik Mühendisliği Bölümüen_US
dc.descriptionWOS: 000447838500029en_US
dc.description.abstractIn this work, a metal-ferroelectric-semiconductor (MFS) type capacitor was fabricated and admittance measurements were held in a wide frequency range of 1 kHz-5 MHz at room temperature for the investigation of frequency and voltage dependence of complex dielectric constant, complex electric modulus and electrical conductivity of the MFS capacitor. Bismuth titanate (Bi4Ti3O12) with high dielectric constant was used as interfacial ferroelectric material and the structure of MFS capacitor was obtained as Au/Bi4Ti3O12/n-Si. Experimental results showed that dielectric, modulus and conductivity parameters are strong functions of frequency and voltage especially in depletion and accumulation regions due to the existence of surface states (N-ss), series resistance (R-s), interfacial polarization and interfacial layer. It was found that R-s of the structure and interfacial ferroelectric layer are efective in accumulation region whereas surface states (N-ss) and interfacial polarization are efective in depletion region. Also the changes in dielectric, modulus and conductivity parameters become considerably high particularly at low frequencies due to high values of R-s and N-ss. The observed anomalous peak in voltage dependent plots of capacitance and dielectric constant was atributed to the particular density distribution of N-ss, R-s and minority carrier injection. Moreover, the value of conductivity at low and intermediate frequencies is almost independent of frequency thus low frequency data was used to extract d.c. conductivity. This work showed that the use of high-dielectric Bi4Ti3O12 as ferroelectric interfacial layer in a MFS capacitor is preferable due to high values of its dielectric constant compared with traditional insulator layer materials such as SiO2 and SnO2. Therefore, a MFS capacitor with Bi4Ti3O12 interfacial layer can store more energy thanks to its high dielectric constant.en_US
dc.identifier.doi10.2339/politeknik.369147en_US
dc.identifier.endpage1008en_US
dc.identifier.issn1302-0900
dc.identifier.issn2147-9429
dc.identifier.issue4en_US
dc.identifier.startpage1003en_US
dc.identifier.urihttps://doi.org/10.2339/politeknik.369147
dc.identifier.urihttps://hdl.handle.net/20.500.12684/5826
dc.identifier.volume20en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherGazi Univen_US
dc.relation.ispartofJournal Of Polytechnic-Politeknik Dergisien_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMFS capacitorsen_US
dc.subjectfrequency and voltage dependenceen_US
dc.subjectsurface states and interfacial polarizationen_US
dc.subjectdielectric properties and electrical modulusen_US
dc.titleEffects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitorsen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
5826.pdf
Boyut:
1.08 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Makale Koleksiyonu