Characterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperature

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dc.contributor.authorDemir, Gülçin Ersöz
dc.contributor.authorYücedağ, İbrahim
dc.contributor.authorYerişkin, Seçkin Altındal
dc.date.accessioned2020-04-30T22:40:43Z
dc.date.available2020-04-30T22:40:43Z
dc.date.issued2019
dc.departmentDÜ, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.descriptionWOS: 000462778400009en_US
dc.description.abstractSurface state (N-ss) density and their relaxation time (tau) of the fabricated Al/ZnO/p-GaAs structure was investigated in frequency range of 1 kHz-1 MHz and in voltage range of +/- 1.2 V. It was found that the variance of capacitance (C) and conductance (G/omega) with frequency and voltage is basically different especially at low and intermediate frequencies in depletion and accumulation regions. Characteristics of Al/ZnO/p-GaAs structure are affected by parameters such as N-ss, dipole and surface polarization in depletion region at low frequencies, while they are affected by parameters such as interfacial ZnO layer and series resistance (R-s) in accumulation region at higher frequencies. C and G have higher values in low frequency region due to effects such as N-ss in metal-semiconductor interface, interfacial ZnO layer and surface dipole polarization. The rise in C and G has been showed up thanks to the ac signal that can be easily monitored N-ss, strong interface and dipole polarizations, interfacial layer especially at weak inversion and depletion regions. Due to special distribution of N-ss at ZnO/p-GaAs interface, parallel conductance (G(p/omega)) - ln(f) plots show a peak under distinct voltage. Thus, the values of N-ss and omega were determined from the peak values of these plots and changed from 3.92 X 10(12) eV(-1) . cm(2) to 4.33 X 10(12) eV(1) . cm(2) and 6.3 X 10(5) s to 6.3X 10(6) s for 0.35 V and 1.1 V, respectively. These values of N-ss and 1.30 nm RMS roughness (from Atomic Force Microscopy (AFM) image) are very suitable for an electronic device.en_US
dc.description.sponsorshipDuzce University Scientific Research ProjectsDuzce University [2017.07.02.567, 2013.07.02.204]en_US
dc.description.sponsorshipThis study was financially supported by Duzce University Scientific Research Projects (Project Numbers: 2017.07.02.567 and 2013.07.02.204).en_US
dc.identifier.doi10.1166/jno.2019.2624
dc.identifier.endpage659en_US
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue5en_US
dc.identifier.startpage653en_US
dc.identifier.urihttps://doi.org/10.1166/jno.2019.2624
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3044
dc.identifier.volume14en_US
dc.identifier.wosWOS:000462778400009en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.relation.ispartofJournal Of Nanoelectronics And Optoelectronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAdmittance Methoden_US
dc.subjectFreguency and Voltage Dependenceen_US
dc.subjectAl/p-GaAs (MS) Structure with ZnO Interlayeren_US
dc.subjectSurface States and Relaxation Timeen_US
dc.titleCharacterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperatureen_US
dc.typeArticleen_US

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