The origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-GaAs contacts at low temperatures (T <= 300 K)

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dc.authoriddokme, ilbilge/0000-0003-0227-6193
dc.authorwosiddokme, ilbilge/ABH-8158-2020
dc.contributor.authorDokme, Ilbilge
dc.contributor.authorYeriskin, Seckin Altindal
dc.contributor.authorYildirim, Mert
dc.contributor.authorDurmus, Perihan
dc.date.accessioned2021-12-01T18:48:07Z
dc.date.available2021-12-01T18:48:07Z
dc.date.issued2020
dc.department[Belirlenecek]en_US
dc.description.abstractAu/n-GaAs contacts were fabricated using n-GaAs wafer with high doping concentration and their electrical characteristics were investigated via admittance measurements at low temperatures (T <= 300 K) at 1MHz. The main electronic parameters such as barrier height, depletion region width, doping concentration, series resistance and Fermi energy were obtained from experimental data. All these parameters showed dependence on temperature since different conduction mechanisms may play role at a certain voltage and temperature range. The forward bias capacitance-voltage curve exhibited an anomalous peak and then capacitance took negative values for each temperature. Such negative capacitance behaviour can be explained by the loss of interface charges located at junction, the existence of surface states, series resistance and a native interlayer. The decrease in series resistance and increase in surface states with increasing temperature were attributed to the decrease in band gap of GaAs and restructuring and reordering of surface charges.en_US
dc.description.sponsorshipGazi University Scientific Research ProjectGazi University [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipThis work was supported by Gazi University Scientific Research Project (GU-BAP.05/2019-26).en_US
dc.identifier.endpage155en_US
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue3-4en_US
dc.identifier.startpage149en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12684/10462
dc.identifier.volume22en_US
dc.identifier.wosWOS:000545315500009en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.ispartofJournal Of Optoelectronics And Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/GaAs contactsen_US
dc.subjectTemperature dependenceen_US
dc.subjectNegative capacitanceen_US
dc.subjectAnomalous peaken_US
dc.subjectSurface statesen_US
dc.subjectSeries resistanceen_US
dc.subjectCurrent-Voltage Characteristicsen_US
dc.subjectElectrical Characteristicsen_US
dc.subjectInterface Statesen_US
dc.subjectBarrier Heighten_US
dc.subjectDielectric-Propertiesen_US
dc.subjectCurrent-Transporten_US
dc.subjectInsulator Layeren_US
dc.subjectSchottky Diodesen_US
dc.subjectDependenceen_US
dc.titleThe origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-GaAs contacts at low temperatures (T <= 300 K)en_US
dc.typeArticleen_US

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