The origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-GaAs contacts at low temperatures (T?300 K)

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dc.authorscopusid12645224200
dc.authorscopusid36722872600
dc.authorscopusid37014168100
dc.authorscopusid6507653014
dc.contributor.authorDokme, I.
dc.contributor.authorYeriskin, S. A.
dc.contributor.authorYildirim, M.
dc.contributor.authorDurmus, P.
dc.date.accessioned2021-12-01T18:39:01Z
dc.date.available2021-12-01T18:39:01Z
dc.date.issued2020
dc.department[Belirlenecek]en_US
dc.description.abstractAu/n-GaAs contacts were fabricated using n-GaAs wafer with high doping concentration and their electrical characteristics were investigated via admittance measurements at low temperatures (T?300 K) at 1MHz. The main electronic parameters such as barrier height, depletion region width, doping concentration, series resistance and Fermi energy were obtained from experimental data. All these parameters showed dependence on temperature since different conduction mechanisms may play role at a certain voltage and temperature range. The forward bias capacitance-voltage curve exhibited an anomalous peak and then capacitance took negative values for each temperature. Such negative capacitance behaviour can be explained by the loss of interface charges located at junction, the existence of surface states, series resistance and a native interlayer. The decrease in series resistance and increase in surface states with increasing temperature were attributed to the decrease in band gap of GaAs and restructuring and reordering of surface charges. © 2020 National Institute of Optoelectronics. All rights reserved.en_US
dc.description.sponsorshipGazi Ãœniversitesi: GU-BAP.05/2019-26en_US
dc.description.sponsorshipThis work was supported by Gazi University Scientific Research Project (GU-BAP.05/2019-26).en_US
dc.identifier.endpage155en_US
dc.identifier.issn14544164
dc.identifier.issue3-4en_US
dc.identifier.scopus2-s2.0-85090522302en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage149en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12684/9966
dc.identifier.volume22en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAnomalous peaken_US
dc.subjectAu/GaAs contactsen_US
dc.subjectNegative capacitanceen_US
dc.subjectSeries resistanceen_US
dc.subjectSurface statesen_US
dc.subjectTemperature dependenceen_US
dc.titleThe origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-GaAs contacts at low temperatures (T?300 K)en_US
dc.typeArticleen_US

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