Comparison of Electronic Parameters of Low Voltage Organic Field-Effect Transistors with Novel Gel Gate Insulators

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dc.contributor.authorYardım, Tayfun
dc.contributor.authorDemir, Ahmet
dc.contributor.authorAllı, Sema
dc.contributor.authorAllı, Abdulkadir
dc.contributor.authorKösemen, Arif
dc.contributor.authorYücedağ, İbrahim
dc.date.accessioned2020-04-30T22:41:17Z
dc.date.available2020-04-30T22:41:17Z
dc.date.issued2019
dc.departmentDÜ, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionkosemen, arif/0000-0002-7572-7963en_US
dc.descriptionWOS: 000469369800012en_US
dc.description.abstractIn this paper, regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT)-based low voltage organic field-effect transistors (OFETs) with three kinds of non-ionic gel gate insulators (NIGIs) were fabricated and compared in terms of their electronic properties. One of the NIGI was prepared by mixing solution-processed poly(methyl acrylate) (PMA) with propylene carbonate (PC) until it becoming a gel state and same procedure was applied to the solution-processed copolymers of PMA called as P18 and P28. As a result, it was seen that fabricated OFETs could be operated at low voltages which is very significant property in order to manipulate the devices in low power electronic applications. On the other hand, it was noted that mobilities of the transistors were enhanced by reducing the effective capacitance (EC) of the NIGIs. This could be attributed to less charge carrier self-localization formation between the insulator-semiconductor interface when the EC was decreased. Furthermore, devices showed similar on-to-off current (I-ON/I-OFF) ratio which was good for using them in inverter applications. Besides, subthreshold swing (SS) for the P18 non-ionic gel OFET (NIGOFET) was the highest probably due to the less water-repellent chemical structure of the P18 NIGI.en_US
dc.description.sponsorshipDuzce University Scientific Research Projects unitDuzce University [2017.07.02.621, 2015.05.03.381]en_US
dc.description.sponsorshipThis study was presented in the 5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018) which held between 4-6 October 2018 in Cappadocia Turkey. Furthermore, we appreciate the Duzce University Scientific Research Projects unit for providing us financial support under the Grant [2017.07.02.621] and [2015.05.03.381].en_US
dc.identifier.doi10.1166/jno.2019.2541en_US
dc.identifier.endpage838en_US
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue6en_US
dc.identifier.startpage833en_US
dc.identifier.urihttps://doi.org/10.1166/jno.2019.2541
dc.identifier.urihttps://hdl.handle.net/20.500.12684/3157
dc.identifier.volume14en_US
dc.identifier.wosWOS:000469369800012en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.relation.ispartofJournal Of Nanoelectronics And Optoelectronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNon-Ionic Gel Gate Insulator (NIGI)en_US
dc.subjectMobilityen_US
dc.subjectOrganic Field-Effect Transistor (OFET)en_US
dc.subjectPoly(methyl acrylate) (PMA)en_US
dc.subjectLow Voltageen_US
dc.titleComparison of Electronic Parameters of Low Voltage Organic Field-Effect Transistors with Novel Gel Gate Insulatorsen_US
dc.typeArticleen_US

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